| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
IRF6217PBF
|
INFINEON |
2010+ |
SOP-8 |
N通道场效应管 SMPS MOSFET HEXFET㈢Power MOSFET |
|
IRFU6215PBF
|
INFINEON |
2010+ |
TO-251 |
N通道场效应管 HEXFET㈢ Power MOSFET |
|
IRFR6215TRLPBF
|
INFINEON |
2010+ |
TO-252 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215PBF
|
INFINEON |
2010+ |
TO-252 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215CTRLPBF
|
INFINEON |
2010+ |
TO-260 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRFR6215CPBF
|
INFINEON |
2010+ |
TO-260 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215L-103PBF
|
INFINEON |
2010+ |
TO-261 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215LPBF
|
INFINEON |
2010+ |
TO-263 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215STRLPBF
|
INFINEON |
2010+ |
TO-263 |
150V N通道场效应管 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
|
IRF6215SPBF
|
INFINEON |
2010+ |
TO-263 |
N通道场效应管 HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A ) |
|
BSO303P
|
INFINEON |
2010+ |
SOP-8 |
N通道场效应管 P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R |
|
BSO303SP
|
INFINEON |
11+ |
SOP-8 |
N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0 |
|
BSC110N06NS3
|
INFINEON |
11+ |
TDSON-8 |
N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO301SP
|
INFINEON |
11+ |
SOP-8 |
N通道30.0 V 场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
|
BSO080P03S
|
INFINEON |
11+ |
SOP-8 |
N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3
|
INFINEON |
11+ |
SOP-8 |
N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSO080P03NS3E
|
INFINEON |
11+ |
SOP-8 |
N通道30.0 V 场效应管P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
|
BSC110N06NS3G
|
INFINEON |
11+ |
TDSON-8 |
N通道60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
|
BSC106N025SG
|
INFINEON |
11+ |
P-DSO-8 |
N通道场效应管OptiMOS㈢2 Power-Transistor |
|
BSC100N06LS3G
|
INFINEON |
11+ |
TDSON-8 |
N通道 60.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |