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IPP80CN10N
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IPP80CN10N

  • 所属类别：场效应管
  • 产品名称：N沟道场效应管 OptiMOS㈢2 Power-Transistor
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：PG-TO220-3
  • 库存状态：有库存
  • 库存量：36000
  • 最低订购量：1
  • 详细资料：点击查找IPP80CN10N的pdf资料
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  • 产品介绍

IPP80CN10N  N沟道场效应管   OptiMOS㈢2 Power-Transistor

与IPP80CN10N相关的IC还有：


型号 厂商 批号 封装 说明
IPS04N03LB INFINEON 10+ P-TO251-3 N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS04N03LA INFINEON 10+ P-TO251-3 N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS03N03LB INFINEON 10+ P-TO251-3 N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPS03N03LA INFINEON 10+ P-TO251-3 N沟道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.4 mOhm; RDS (on)
IPP80N03S4L INFINEON 10+ PG-TO220-3 N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP50CN10N INFINEON 10+ PG-TO220-3 N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP35CN10N INFINEON 10+ PG-TO220-3 N沟道场效应管 OptiMOS㈢2 Power-Transistor
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IPP26CNE8N INFINEON 10+ PG-TO220-3 N沟道场效应管 OptiMOS㈢2 Power-Transistor
SB602G SEP/TSC 11+ROHS DIP-4 桥式整流器

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型号 厂商 批号 封装 说明
IPP50CN10N INFINEON 10+ PG-TO220-3 N沟道场效应管 OptiMOS㈢2 Power-Transistor
IPP35CN10N INFINEON 10+ PG-TO220-3 N沟道场效应管 OptiMOS㈢2 Power-Transistor
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IPP12CNE8N INFINEON 2010+ PG-TO220-3 功率晶体管 OptiMOS㈢2 Power-Transistor
IPP12CN10N INFINEON 2010+ PG-TO220-3- 功率晶体管 OptiMOS㈢2 Power-Transistor
IPP11N03LA INFINEON 2010+ TO220-3 功率晶体管 OptiMOS㈢2 Power-Transistor
IPP114N03L INFINEON 2010+ TO-220 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 11.4 mOhm; RDS (on) (max) (@4.5V)
IPP10N03LB INFINEON 2010+ TO-220 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.9 mOhm; RDS (on) (max) (@4.5V):
IPP100N06S2L05 INFINEON 2010+ TO-220 功率晶体管 OptiMOS㈢-T Power-Transistor
IPP09N03LA INFINEON 2010+ TO220-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 25.0 V; RDS (on) (max) (@10V): 9.2 mOhm; RDS (on) (max) (@4.5V):
IPP096N03L INFINEON 2010+ TO-220-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (@4.5V):
IPP08CNE8N INFINEON 2010+ PG-TO220-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.4 mOhm; RDS (on) (max) (@4.5V)
IPP08CN10N INFINEON 2010+ TO-220 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) (@4.5V
IPP080N03L INFINEON 2010+ TO-220 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V)

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