ISL80111

• Product Introduction

Main Features: TW2866C

超低压差：在3A为75mV（典型值）
优良的V IN的PSRR：1kHz时为70分贝（典型值）
±1.6％，保证了V OUT精度为-40°C 非常快的负载瞬态响应
广泛的保护和报告功能
V IN范围：1V至3.6V，V OUT范围：0.8V至3.3V
小10 LD 3X3 DFN封装
描述

ISL80111, ISL80112, and ISL80113 are the size limits of ultra-low dropout LDOs for the optimal balance between design performance, size, and power consumption for data communication, computing, storage, and medical applications. These LDOs are specified for output current and low-voltage conversion optimization at 1A, 2A, and 3A. Operating at one volt from 1V to 3.6V, and with deviations from the traditional 3.3V to 5V, the V OUT is adjustable from 0.8V to 3.3V. With a PSRR greater than 100kHz at 40 dB in V, these LDOs are ideal for noise-sensitive applications. Ensuring ± 1.6% V OUT accuracy for overall conditions suitable for these components with precise voltage suppling of the latest low-voltage digital integrated circuits. The enable input allows the section to be set to low quiescent current shutdown mode. This series uses submicron CMOS technology, delivering optimal analog performance and an overall value typically below 2.5V for input voltage conversion that requires application. It also features superior load transient regulation and a unique NMOS power stage. Compared to the functions of these LDOs, bipolar LDOs have significantly lower load quiescent current consumption.