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IPB22N03S4L-15
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IPB22N03S4L-15

  • Category:Power management chip
  • Product Name:Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
  • Manufacturers:INFINEON
  • Production Batch Number:10+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:4500
  • Minimum order quantity: 1
  • Details:Click here to find PDF materials for IPB22N03S4L-15
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  • Product introduction

IPB22N03S4L-15 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; RthJC (max): 0.8 K/W;

andIPB22N03S4L-15Related ICs are:


Model Manufacturers lot number encapsulation illustrate
IPB45N06S3L-13 INFINEON 10+ TO263-3-2 OptiMOS (III) - T Power-Transistor
IPB45N06S3-16 INFINEON 10+ TO263-3-2 OptiMOS (III) - T Power-Transistor
IPB45N04S4L-08 INFINEON 10+ TO263-3-2 OptiMOS (III) - T Power-Transistor
IPB25N06S3L-22 INFINEON 10+ TO263-3-2 OptiMOS (III) - T Power-Transistor
IPB25N06S3-25 INFINEON 10+ TO-263 OptiMOS (III) - T Power-Transistor
IPB180N06S4-H1 INFINEON 10+ PG-TO263-7- Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-H0 INFINEON 10+ PG-TO263-7- Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-00 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N03S4L-H0 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor

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Model Manufacturers lot number encapsulation illustrate
IPB180N06S4-H1 INFINEON 10+ PG-TO263-7- Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-H0 INFINEON 10+ PG-TO263-7- Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-00 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N03S4L-H0 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB180N03S4L-01 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB160N04S4-H1 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB160N04S3-H2 INFINEON 10+ PG-TO263-7 OptiMOS㈢ - T Power-Transistor
IPB160N04S2L-03 INFINEON 10+ PG-TO263-7 OptiMOS㈢ - T Power-Transistor
IPB160N04S2-03 INFINEON 10+ TO-263-6 OptiMOS㈢ - T Power-Transistor
IPB120N06S4-H1 INFINEON 10+ TO263-3 Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB120N06S4-03 INFINEON 10+ TO263-3 Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB120N06S4-02 INFINEON 10+ TO263-3 Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB100N10S3-05 INFINEON 10+ PG-TO263-3 OptiMOS (iii) Power-Transistor
IPB100N08S2L-07 INFINEON 10+ TO263-3 OptiMOS (iii) Power-Transistor
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IPB100N08S2-07 INFINEON 11+ TO-263 Power transistors

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