Model manufacturer |
, | lot number | , package | description |
IPB25N06S3-25
|
INFINEON |
10+ |
TO-263 |
OptiMOS(iii)-T Power-Transistor |
IPB22N03S4L-15
|
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N06S4-H1
|
INFINEON |
10+ |
PG-TO263-7- |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S4-H0
|
INFINEON |
10+ |
PG-TO263-7- |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S4-00
|
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S3-02
|
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N03S4L-H0
|
INFINEON |
10+ |
PG-TO263-7- |
OptiMOS (III) - T Power-Transistor |
IPB180N03S4L-01
|
INFINEON |
10+ |
PG-TO263-7- |
OptiMOS (III) - T Power-Transistor |
IPB160N04S4-H1
|
INFINEON |
10+ |
PG-TO263-7- |
OptiMOS (III) - T Power-Transistor |
IPB160N04S3-H2
|
INFINEON |
10+ |
PG-TO263-7 |
OptiMOS (III) - T Power-Transistor |
IPB160N04S2L-03
|
INFINEON |
10+ |
PG-TO263-7 |
OptiMOS (III) - T Power-Transistor |
IPB160N04S2-03
|
INFINEON |
10+ |
TO-263-6 |
OptiMOS (III) - T Power-Transistor |
IPB120N06S4-H1
|
INFINEON |
10+ |
TO263-3 |
Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt |
IPB120N06S4-03
|
INFINEON |
10+ |
TO263-3 |
Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt |
IPB120N06S4-02
|
INFINEON |
10+ |
TO263-3 |
Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt |
IPB100N10S3-05
|
INFINEON |
10+ |
PG-TO263-3 |
OptiMOS (iii) Power-Transistor |
IPB100N08S2L-07
|
INFINEON |
10+ |
TO263-3 |
OptiMOS (iii) Power-Transistor |
IRLMS6802TRPBF
|
INFINEON |
11+ |
SOT23-6 |
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package; Similar to IRLMS6802TR with Lead Free Packaging |
IRLMS6802TR
|
INFINEON |
11+ |
SOT-163 |
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package; A IRLMS6802 with Tape and Reel Packaging |
IRLMS6702TRPBF
|
INFINEON |
11+ |
SOT23-6 |
20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package; A IRLMS6702 with Tape and Reel Packaging |