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IDB23E60
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IDB23E60

  • 所属类别：整流二极管
  • 产品名称：600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
  • 厂商：Infineon
  • 生产批号：2010+
  • 封装：SOT263
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找IDB23E60的pdf资料
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  • 产品介绍

IDB23E60  600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;

与IDB23E60相关的IC还有：


型号 厂商 批号 封装 说明
IDD06E60 INFINEON 2010+ PG-TO252-3 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA
IDD03E60 INFINEON 2010+ PG-TO252-3 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 3.0 A; IF (max): 7.3 A; IF,SM (max): 16.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB45E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E120 INFINEON 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB18E120 Infineon 2010+ SOT263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB15E60 Infineon 2010+ P-TO220-3-4 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB12E120 Infineon 2010+ P-TO220-3-4 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB09E60 Infineon 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB09E120 Infineon 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;

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Infineon品牌产品推荐


型号 厂商 批号 封装 说明
IDB18E120 Infineon 2010+ SOT263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB15E60 Infineon 2010+ P-TO220-3-4 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB12E120 Infineon 2010+ P-TO220-3-4 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB09E60 Infineon 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB09E120 Infineon 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB06E60 Infineon 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB04E120 Infineon 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
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