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IDD06E60
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IDD06E60

  • Category:Rectifier diodes
  • Product Name:600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:PG-TO252-3
  • Stock Status:There is stock
  • Stock Quantity:12000
  • Minimum order quantity: 1
  • Details:Click to find the PDF of the IDD06E60
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  • Product introduction

IDD06E60  600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA

andIDD06E60Related ICs are:


Model Manufacturers lot number encapsulation illustrate
IDD23E60 INFINEON 10+ SOT-252 肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDD15E60 INFINEON 10+ SOT-252 肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
RS203 Orister 08+pb TO-92 Bridge rectifier
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IDD09E60 INFINEON 2010+ PG-TO252-3 快恢复二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDD03E60 INFINEON 2010+ PG-TO252-3 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 3.0 A; IF (max): 7.3 A; IF,SM (max): 16.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB45E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E120 INFINEON 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB23E60 Infineon 2010+ SOT263 600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;

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Model Manufacturers lot number encapsulation illustrate
IDD03E60 INFINEON 2010+ PG-TO252-3 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 3.0 A; IF (max): 7.3 A; IF,SM (max): 16.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB45E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E120 INFINEON 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB23E60 Infineon 2010+ SOT263 600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB18E120 Infineon 2010+ SOT263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB15E60 Infineon 2010+ P-TO220-3-4 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB12E120 Infineon 2010+ P-TO220-3-4 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB09E60 Infineon 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB09E120 Infineon 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB06E60 Infineon 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB04E120 Infineon 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
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