TLC2201-SP

• Product introduction

The TLC2201 is a precision, low noise operational amplifier using TI's advanced LinCMOS manufacturing process. The device combines the noise performance of a very low noise JFET amplifier with the dc (dc) accuracy previously available only with bipolar amplifiers. The Advanced LinCMOS process uses silicon gate technology to achieve input offset voltage stability that far exceeds that achieved with metal gate technology. In addition, this process technology achieves the input impedance level provided by top-gate JFETs and expensive dielectric-isolated devices.

The combination of excellent dc and noise performance and a common-mode input range including negative rails makes these devices ideal for high-impedance, low-level signal conditioning applications in single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand -100mA inrush currents without constant latch-up. In addition, tests according to MIL-PRF-38535, Method 3015.2 have confirmed that the device's internal ESD protection circuitry protects against functional faults at voltages up to 2000V; However, caution should be exercised when using these devices, as exposure to ESD can lead to degradation of parameter performance.

The TLC2201 is characterized for operation over the full military temperature range (-40°C to 125°C).

characteristic

• SMD5962-9088203V2A compliant with QML-V standard
• Low Input Offset Voltage: 400μV Max
• Excellent Offset Voltage Stability Over Temperature: 0.05μV/°C Typical
• Rail-to-rail output swing
• Low input bias current: at T_A1pA typical value at = 25°C
• The common-mode input voltage range includes the negative supply rail
• Technical specifications are fully developed for single-supply and split-power operation