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SI3585DV-T1-E3
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SI3585DV-T1-E3

  • Category:Discrete components
  • Product Name:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on)
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TSOP-6
  • Stock Status:There is stock
  • Stock Quantity:120000
  • Minimum order quantity: 1
  • Details:Click here to find PDF information on SI3585DV-T1-E3
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  • Product introduction

SI3585DV-T1-E3

MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:20V

andSI3585DV-T1-E3Related ICs are:


Model Manufacturers lot number encapsulation illustrate
SI3585DV-T1-E3 VISHAY 10+ TSOP-6 MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on)
SI3585DV Vishay 05+ SO-8 N／A
SI3585DVT1 Vishay 05+ SO-8 N／A

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