OP223TXVHigh reliability GaAIAs infrared light-emitting diodes
OPTEK reserves the right to change at any time in order to improve the design and provide the best possible products.
OPTEK Technologies Inc. -1645 - Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
Fax: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Question A.2
07/06
Page 1, 3
High reliability GaAIAs infrared light-emitting diodes
OP223，OP224（TX，TXV）
OP224（S）
Illustrate:
eachOP223（TX，TXV）andOP224（TX，TXV）The device is 890 nm of high-reliability gallium aluminum arsenic
Infrared LEDs can be mounted directly in a hermetically sealed miniature "pill" package
Install to PCBoards. The gallium aluminum arsenic feature provides twice the gallium radiation output
Arsenide at the same forward current.
After manufacturing electrical tests, the equipment processes 100% of OPTEK's inspection plan,
This is modeled after MIL-PRF-19500. Center at 890 nm wavelengthOP223（TX，TXV）
OP224（TX，TXV）。
After the TX and TXV equipment processed OPTEK's military inspection program, MIL-PRF-19500 pattern.
S equipment processing, OPTEK pattern after military inspection plan
MIL-STD-883
。
For additional design information and reliability (degradation) data, please refer to Application Notices 208 and 210.
For more information, please contact your local sales representative or OPTEK.
Peculiarity:
•
OPTEK's military inspection plan, pattern processing, to
After MIL-PRF-19500
•
Miniature sealed "pill" pack
•
GaAs output power twice at the same drive current
•
"S" horizontal filtering
•
Mechanically and spectrally matched OP600 phototransistor
part
number
LED peaks
wavelength
Output power/
minute
Mr. Liang
horn
lead
length
OP223TX
890 nm
1.00 mW/cm
2
24°
N / A
OP223TXV
1.50 mW/cm
2
OP224S
OP224TX
OP224TXV
Scope of application:
•
Non-contact reflective object sensor
•
Automated assembly lines
•
Mechanical automation
•
Safety of the machine
•
End trip sensor
•
Door sensor
Pin #LED sensor
1
Anode collector
2
Cathode emission
1
2
inch
[mm]
Size Unit:
OPTEK reserves the right to change at any time in order to improve the design and provide the best possible products.
OPTEK Technologies Inc. -1645 - Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
Fax: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Question A.2
07/06
Page 2 3
High reliability GaAIAs infrared light-emitting diodes
OP223，OP224（TX，TXV）
OP224（S）
Absolute maximum rating
(
One
= 25°C unless otherwise noted)
Storage temperature range
-65
Ø
C to +150
Ø
Ç
Operating temperature range
-55
Ø
C to +125
Ø
Ç
Leads to [5 seconds 1/16 inch (1.6 mm) from the case with the soldering iron of the soldering temperature
（1）
260℃
Reverse voltage
2.0 V，
Continuous forward current
Current 100 mA
power consumption
（2）
100 mW
Exegesis:
1。 There are no clean or low solids. RMA flux recommendations. The time can be extended to 10 seconds, maximum flow when welding.
2。 Reduces linearity of 1.00 mW/°C above 25°C.
Electrical characteristics
(
One
= 25°C unless otherwise noted)
symbol
parameter
Minimum typical maximum unit
Test conditions
Input diode
é
E (Asia Pacific)
Radiated power output
OP223（TX，TXV）
OP224（TX，TXV）
1.00
1.50
-
-
-
-
milliwatt
I
F
= at 50 mA
I
F
= at 50 mA
To five
F
Forward voltage
0.80
-
1.80
To five
I
F
= at 50 mA
I
ŕ
Reverse current
-
-
100
Microamps
To five
ŕ
= 2.0 V，
λ
Class P
Peak emission wavelength
-
890
-
nanometre
I
F
= at 50 mA
second
Spectral bandwidth between half powers
dot
-
80
-
nanometre
I
F
= at 50 mA
Δλ
Class P
/Temperature
Spectral drift with temperature
-
0.18
-
Nano/°CI is
F
= Constant
θ
Hp
The emission angle of the half-power point
-
18
-
Degree me
F
= at 50 mA