OP235TXV

• Product Introduction

OP235TXV High-reliability sealed IR light-emitting diodes

Peculiarity: • TO-46 sealed package with lens • GaN arsenide output power twice at the same drive current • feature to define the infrared energy along the mechanical axis equipment • Narrow beam angle • Treated to comply with MIL-PRF-19500

Illustrate: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared light-emitting diode that is housed in a seal Resulting in metal-46 housing 0.50" (12.70 mm). Gallium aluminum arsenic function provides a higher level The same forward current radiation is more than gallium arsenide output, while at 890 nm wavelength is closest Spectral response of silicon phototransistors. The device provides a lens canister with an 18° beam angle Between half power points, this is beneficial for application design with OP804 and easy beam interruption OP805 series of high-reliability phototransistors