OP236TX

• Product introduction

OP236TX High Reliability Sealed IR Light Emitting Diode

Peculiarity:
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TO-46 sealed package, with lens
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GaAs output power twice at the same drive current
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features to define the infrared energy along the mechanical axis
equipment
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Narrow beam angle
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Processed to comply with MIL-PRF-19500

Illustrate:
The devices in this series are gallium aluminum arsenic (GaAIAs) infrared light-emitting diodes, housed in a sealed seal
Resulting metal-46 housing 0.50" (12.70 mm). Gallium aluminum arsenic features provide a higher level
The radiation in the same forward current is closest than gallium arsenide output, and at a wavelength of 890 nm
Spectral response of silicon phototransistor. The device provides a lens tank with a beam angle of 18°
Between half power points, this facilitates designs with OP804 and easy beam interrupt applications
OP805 series of high-reliability phototransistors.