S34ML16G302TFB200

• 产品介绍

16 Gb, 3 V, 4-bit ECC, x8 I/O, SLC NAND

Flash Memory for Embedded

General Description SkyHigh S34ML16G2 16-Gb NAND is offered in 3.3 VCC with ×8 I/O interface. This document contains information for the S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die. For detailed specifications, please refer to the discrete die data sheet: S34ML01G2_04G2. Distinctive Characteristics n Density – 16-Gb (4-Gb ´ 4) n Architecture (For each 4-Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or (128k + 8k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 16M) bytes – Device Size – 2 Planes per Device or 512 Mbyte n NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed n Supply Voltage – 3.3 V device: Vcc = 2.7 V ~ 3.6 V n Security – One Time Programmable (OTP) area – Serial number (unique ID) – Hardware program/erase disabled during power transition n Additional Features – Supports Multiplane Program and Erase commands – Supports Copy Back Program – Supports Multiplane Copy Back Program – Supports Read Cache n Electronic Signature – Manufacturer ID: 01h n Operating Temperature – Industrial: -40 °C to 85 °C Performance n Page Read / Program – Random access: 30 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 300 µs (Typ) n Block Erase / Multiplane Erase – Block Erase time: 3.5 ms (Typ) n Reliability – 100,000 Program / Erase cycles (Typ)  (with 4-bit ECC per 528 bytes) – 10 Year Data retention (Typ) – Blocks zero and one are valid and will be valid for at least  1000  program-erase cycles with ECC n Package Options – Lead Free and Low Halogen – 48-Pin TSOP 12 ´ 20 ´ 1.2 mm – 63-Ball BGA 9 ´ 11 ´ 1.2 mm

S34ML16G202BHI000

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