| 型号 |
厂商 |
批号 |
封装 |
说明 |
|
1N4148,113
|
NXP |
10+ |
DO35 |
Silicon Epitaxial Planar Diodes |
|
BAV23,215
|
NXP |
10+ |
Tape |
General Purpose Double Diode(双通用二极管) |
|
BC847BS,115
|
NXP |
10+ |
SOT-23 |
NPN general purpose double transistor(NPN通用型双晶体管) |
|
BZV55-C8V2,115
|
NXP |
10+ |
PBFREE |
Voltage regulator diodes |
|
PMBD7000,215
|
NXP |
10+ |
PBFREE |
High-Speed Double Diode(双高速二极管 |
|
PMBT2222A,215
|
NXP |
10+ |
11+ |
NPN switching transistors |
|
BAS70,215
|
NXP |
10+ |
Tape |
Schottky Barrier (Double) Diodes(肖特基势垒(双)二极管) |
|
BAS21,215
|
NXP |
10+ |
SOT-23 |
General purpose diodes(通用二极管) |
|
BC847B,215
|
NXP |
10+ |
SOT-223 |
NPN General Purpose Transistor |
|
BAS316,115
|
NXP |
10+ |
Tape |
High-speed diodes( 高速二极管) |
|
BC857B,215
|
NXP |
10+ |
Tape |
PNP General Purpose Transistor(PNP通用晶体管) |
|
BC817-40,215
|
NXP |
10+ |
SOT23 |
NPN General Purpose Amplifier(NPN通用放大器) |
|
PH4830L,115
|
NXP |
10+ |
Standardpac |
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V |
|
BC869,115
|
NXP |
10+ |
SOT89 |
PNP medium power transistor(PNP中等功率晶体管) |
|
BAV99S,115
|
NXP |
10+ |
Tape |
High Speed Switching Diodes; Package: PG-SOT363-6; Configuration: Quadruple; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 150.0 nA; trr (max): 4.0 |
|
BAS16,215
|
NXP |
10+ |
SOT23-3 |
High-speed diodes( 高速二极管) |
|
PMEG4020EP,115
|
NXP |
10+ |
PBFREE |
2 A low Vf MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
|
BC847C,215
|
NXP |
10+ |
Tape |
NPN General Purpose Transistor |
|
SA58631
|
NXP |
10+ |
HVQFN8 |
SA58631 Series 6 db - 30 db Gain 3 W BTL Audio Amplifier - HVSON - 8 |
|
ASC8850
|
NXP |
10+ |
开发板 |
asc8850 高清摄像机开发包 H.264 1080P |