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BSC016N03MS
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BSC016N03MS

  • 所属类别：场效应管
  • 产品名称：N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：15600
  • 最低订购量：1
  • 详细资料：点击查找BSC016N03MS的pdf资料
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  • 产品介绍

BSC016N03MS         N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 mOhm; ID (max): 100.0 A;

与BSC016N03MS相关的IC还有：


型号 厂商 批号 封装 说明
BSC030N03LSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC030N03LS INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC016N03LS INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC014N03MS INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
BSC014N03LS INFINEON 09+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
FDW252P FAIRCHILD 09+ TSSOP-8 -20V P-Channel 2.5V Specified PowerTrench MOSFET; Package: TSSOP-8; No of Pins: 8; Container: Tape & Reel
FDS8870_G FAIRCHILD 09+ TO-252 30V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel

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型号 厂商 批号 封装 说明
BSC016N03LS INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3
BSC014N03MS INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
BSC014N03LS INFINEON 09+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1
IKW03N120H2 INFINEON 10+ TO-247 IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°:
IKP20N60T INFINEON 10+ TO-220 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管
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IKP04N60T INFINEON 10+ TO-220 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极管
IKP03N120H2 INFINEON 10+ TO-220 IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°:
IKP01N120H2 INFINEON 10+ TO-220 IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°:
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IKA15N60T INFINEON 2009+ TO-220F IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-220; VCE (max): 600.0 V; IC(max) @ 25°: 14.7
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