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BSC020N03LS
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BSC020N03LS

  • 所属类别：场效应管
  • 产品名称：30.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：0
  • 最低订购量：1
  • 详细资料：点击查找BSC020N03LS的pdf资料
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  • 产品介绍

BSC020N03LS  30.0 V   100.0 A  N通道场效应管 N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RDS (on) (max) (@4.5V): 3.3 mOhm; ID (max): 100.0 A;

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型号 厂商 批号 封装 说明
BSC020N03MS INFINEON 10+ TDSON-8 30.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
BSC025N03MS INFINEON 2011+ TDSON-8 N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
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BSC057N08NS3G INFINEON 2011+ TDSON-8 N通道，80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LSG INFINEON 2011+ TDSON-8 N通道，30.0 V 44.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
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BSC090N03LSG INFINEON 10+ TDSON-8 N通道 30.0 V 47.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
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BSC057N03LSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道，场效应管
BSC057N03MSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道，场效应管
BSC059N03SG INFINEON 2011+ TDSON-8 N通道，60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON 2011+ TDSON-8 N通道，60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC100N10NSFG INFINEON 2011+ TDSON-8 N通道，100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD
BSC082N10LSG INFINEON 2011+ TDSON-8 N通道，100.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC020N03MSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03LSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS

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