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BSC020N03MS
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BSC020N03MS

  • Category:FETs
  • Product Name:30.0 V 100.0 A N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
  • Manufacturers:INFINEON
  • Production Batch Number:10+
  • Encapsulation:TDSON-8
  • Stock Status:There is stock
  • Stock Quantity:0
  • Minimum order quantity: 1
  • Details:点击查找BSC020N03MS的pdf资料
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  • Product introduction

BSC020N03MS  30.0 V   100.0 A  N通道场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RDS (on) (max) (@4.5V): 3.3 mOhm; ID (max): 100.0 A;

andBSC020N03MSRelated ICs are:


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BSC059N03S INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC031N06NS3 INFINEON 11+ SuperSO8 N沟道 60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (o
BSC100N10NSF INFINEON 10+ TDS0N-8 100.0 V 90.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC082N10LS INFINEON 10+ TSSOP-20 100.0 V 100.0 A N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm;
BSC020N03LS INFINEON 10+ TDSON-8 30.0 V 100.0 A N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
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BSC025N03MS INFINEON 2011+ TDSON-8 N-Channel 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC027N03S INFINEON 2011+ TDSON-8 N-Channel 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC060N10NS3 INFINEON 2011+ TDSON-8 N-Channel 100.0 V 90.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm;
BSC057N08NS3G INFINEON 2011+ TDSON-8 N-channel, 80.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 44.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 44.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 47.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N-Channel 80.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC080N03MSG INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
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BSC057N03MSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道，场效应管
BSC059N03SG INFINEON 2011+ TDSON-8 N-channel, 60.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON 2011+ TDSON-8 N-channel, 60.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC100N10NSFG INFINEON 2011+ TDSON-8 N-channel, 100.0 V 90.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD
BSC082N10LSG INFINEON 2011+ TDSON-8 N-channel, 100.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC020N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS

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