Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
BSC030N03LSGXT |
INFINEON |
11+ |
SOP-8 |
N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7 |
BSC030N03LSG |
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC030N03LS |
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC016N03MS |
INFINEON |
11+ |
TDSON-8 |
N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC016N03LS |
INFINEON |
10+ |
TDSON-8 |
N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (on) (max) (@4.5V): 2.3 |
BSC014N03MS |
INFINEON |
10+ |
TDSON-8 |
N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1 |
BSC014N03LS |
INFINEON |
09+ |
TDSON-8 |
N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V): 2.1 |
IKW03N120H2 |
INFINEON |
10+ |
TO-247 |
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: |
IKP20N60T |
INFINEON |
10+ |
TO-220 |
Low loss DuoPack: Trench field termination technology and soft, fast recovery parallel to fast recovery diode in IGBT |
IKP15N60T |
INFINEON |
10+ |
TO-220 |
Low loss DuoPack: Trench field termination technology and soft, fast recovery parallel to fast recovery diode in IGBT |
IKP10N60T |
INFINEON |
10+ |
TO-220 |
Low loss DuoPack: Trench field termination technology and soft, fast recovery parallel to fast recovery diode in IGBT |
IKP06N60T |
INFINEON |
10+ |
TO-220 |
Low loss DuoPack: Trench field termination technology and soft, fast recovery parallel to fast recovery diode in IGBT |
IKP04N60T |
INFINEON |
10+ |
TO-220 |
Low loss DuoPack: Trench field termination technology and soft, fast recovery parallel to fast recovery diode in IGBT |
IKP03N120H2 |
INFINEON |
10+ |
TO-220 |
IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: |
IKP01N120H2 |
INFINEON |
10+ |
TO-220 |
IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: |
IKCS12F60AA |
INFINEON |
2009+ |
PG-MSIP-20 |
Intelligent Power Modules (IPM) CIPOS™; Package: PG-MSIP-20; |
IKB20N60T |
INFINEON |
2009+ |
TO-263 |
IGBT with Anti-Parallel Diode; Package: PG-TO263-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 2 |
IKB15N60T |
INFINEON |
2009+ |
TO-263 |
IGBT with Anti-Parallel Diode; Package: PG-TO263-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 2 |
IKB10N60T |
INFINEON |
2009+ |
TO-263 |
Fast recovery diode |
IKB06N60T |
INFINEON |
2009+ |
TO-263 |
Fast recovery diode |