主页 > 产品中心 > 场效应管
BSC057N03LS
产品图片仅供参考 欢迎索取产品详细资料

BSC057N03LS

  • 所属类别:场效应管
  • 产品名称:N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
  • 厂商:INFINEON
  • 生产批号:11+
  • 封装:TDS0N-8
  • 库存状态:有库存
  • 库存量:35000
  • 最低订购量:1
  • 详细资料:点击查找BSC057N03LS的pdf资料
  • 点击询价
联系我们在线客服1 在线客服2 点击发送邮件
  • 产品介绍

BSC057N03LS  N沟道 30.0 V   73.0 A场效应管  N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS (on) (max) (@4.5V): 8.6 mOhm; ID (max): 73.0 A;

与BSC057N03LS相关的IC还有:


型号 厂商 批号 封装 说明
BSC100N03LS INFINEON 11+ P-TDSON-8 N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC100N03MS INFINEON 11+ P-TDSON-8 N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC047N08NS3 INFINEON 11+ TDSON-8 N沟道 80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC090N03MS INFINEON 11+ SON-8 N沟道 30.0 V 48.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS
BSC080N03MS INFINEON 11+ TDSON-8 N沟道 30.0 V 53.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS
BSC057N03MS INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC059N03S INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC031N06NS3 INFINEON 11+ SuperSO8 N沟道 60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (o
BSC100N10NSF INFINEON 10+ TDS0N-8 100.0 V 90.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC082N10LS INFINEON 10+ TSSOP-20 100.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm;

çƒé—¨æœç´¢


型号 厂商 批号 封装 说明
CM300DY-24J Mitsubishi 2021+ 模块 Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi 2021+ 模块 Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations 24+ 连接器 CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation 24+ 连接器 Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP 24+ 工具 NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT 24+ 连接器 Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE 24+ DIP HSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT 2023+ 连接器 Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC) 24+ 工具 DMC压线钳 原装进口正品
CMF8342T CMF 23+ 模块 T系列三极管放大器模块
RWR78N39R2FR Vishay 24+ DIP RES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI 22+ 继电器 STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱 2024+ 工具 精密位置检测器
TFPT1206L1001FV Vishay Dale 24+ 1206 SENSOR PTC 1KOHM 1% 1206
CKRA2410 Crydom Inc 23+ 继电器 Solidstate relay,10A 24-280V 90-280V i/p,
KDN-B-110V Mors Smitt 2024+ 继电器 闭锁/双稳态重载功率继电器KDN-B 110VDC
4403-000LF CTS 2024+ DIP 微型 EMI #4-40 UNC-2A C 滤波器
MPY20W1470FB00MSSD Wima 2023+ DIP2 MP 3-Y2 4700 pF 20% 250 VAC 5x10x13.5 FVRM10
ABCIRH03T14S5SCNF80M32V0 AB Connectors 24+ 连接器 CONN RCPT FMALE 5POS GOLD CRIMP
M3-A230 MORSSMITT 2024+ 继电器 Plug-in general purpose relay

INFINEON品牌产品推荐


型号 厂商 批号 封装 说明
BSC057N03MS INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC059N03S INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC031N06NS3 INFINEON 11+ SuperSO8 N沟道 60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (o
BSC100N10NSF INFINEON 10+ TDS0N-8 100.0 V 90.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC082N10LS INFINEON 10+ TSSOP-20 100.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm;
BSC020N03LS INFINEON 10+ TDSON-8 30.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
BSC020N03MS INFINEON 10+ TDSON-8 30.0 V 100.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.2 mOhm; RD
BSC025N03MS INFINEON 2011+ TDSON-8 N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC027N03S INFINEON 2011+ TDSON-8 N通道 30.0 V 100.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC060N10NS3 INFINEON 2011+ TDSON-8 N通道100.0 V 90.0 A 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm;
BSC057N08NS3G INFINEON 2011+ TDSON-8 N通道,80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LSG INFINEON 2011+ TDSON-8 N通道,30.0 V 44.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON 10+ TDSON-8 N通道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON 10+ TDSON-8 N通道 30.0 V 47.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC080N03MSG INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
BSC057N03LSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道,场效应管
BSC057N03MSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道,场效应管
BSC059N03SG INFINEON 2011+ TDSON-8 N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON 2011+ TDSON-8 N通道,60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (

分类检索