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BSC057N03LSG
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BSC057N03LSG

  • 所属类别：场效应管
  • 产品名称：30.0 V 73A N通道，场效应管
  • 厂商：INFINEON
  • 生产批号：2011+
  • 封装：TDSON-8
  • 库存状态：有库存
  • 库存量：23000
  • 最低订购量：1
  • 详细资料：点击查找BSC057N03LSG的pdf资料
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  • 产品介绍

BSC057N03LSG  N通道，30.0 V  73.0 A场效应管N-Channel MOSFETs (20V… 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS (on) (max) (@4.5V): 8.6 mOhm; ID (max): 73.0 A;

与BSC057N03LSG相关的IC还有：


型号 厂商 批号 封装 说明
BSC100N03LSG INFINEON 2011+ TDSON-8 N通道，30.0 V 44.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON 10+ TDSON-8 N通道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON 10+ TDSON-8 N通道 30.0 V 47.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N通道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC080N03MSG INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
BSC057N03MSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道，场效应管
BSC059N03SG INFINEON 2011+ TDSON-8 N通道，60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON 2011+ TDSON-8 N通道，60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC100N10NSFG INFINEON 2011+ TDSON-8 N通道，100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD
BSC082N10LSG INFINEON 2011+ TDSON-8 N通道，100.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD

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型号 厂商 批号 封装 说明
BSC057N03MSG INFINEON 2011+ TDSON-8 30.0 V 73A N通道，场效应管
BSC059N03SG INFINEON 2011+ TDSON-8 N通道，60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON 2011+ TDSON-8 N通道，60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC100N10NSFG INFINEON 2011+ TDSON-8 N通道，100.0 V 90.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD
BSC082N10LSG INFINEON 2011+ TDSON-8 N通道，100.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC020N03MSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03LSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03MSG INFINEON 2011+ TDSON-8 N通道，30.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC027N03SG INFINEON 2011+ SuperSO8 N通道， 场效应管
BSC079N10NSG INFINEON 2011+ TDSON-8 N通道，100V 100 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on)
BSC060N10NS3G INFINEON 2011+ TDSON-8 N通道，100V 90 A 场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm; RDS (on)
BSC030N03MSG INFINEON 10+ TDSON-8 30.0 V 100.0 A N通道 功率场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
SUP90N06 INFINEON 10+ TO-220 N通道 功率场效应管N-Channel 60-V (D-S) 175 C MOSFET
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SPU30N03S2L-10 INFINEON 10+ TO251-3 30.0 V 30.0 A N通道 功率场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK (TO-251); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.2 mO
SPU30N03S2-08 INFINEON 10+ TO251-3 30.0 V 30.0 A N通道 功率场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TO251-3; Package: IPAK (TO-251); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.2 mO
SPU11N10 INFINEON 10+ TO251-3 N通道 功率场效应管 SIPMOS Power-Transistor
SPP80N10L INFINEON 10+ TO220-3 N通道 功率场效应管 SIPMOS Power-Transistor

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