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BSC057N08NS3G
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BSC057N08NS3G

  • Category:FETs
  • Product Name:N-channel, 80.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
  • Manufacturers:INFINEON
  • Production Batch Number:2011+
  • Encapsulation:TDSON-8
  • Stock Status:There is stock
  • Stock Quantity:23000
  • Minimum order quantity: 1
  • Details:点击查找BSC057N08NS3G的pdf资料
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  • Product introduction

BSC057N08NS3G  N通道，80.0 V  100.0 A场效应管N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A;

andBSC057N08NS3GRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
BSC025N03MS INFINEON 2011+ TDSON-8 N-Channel 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
BSC027N03S INFINEON 2011+ TDSON-8 N-Channel 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;
TS10P07G LTSEP 09+ DIP Bridge rectifier
BSC060N10NS3 INFINEON 2011+ TDSON-8 N-Channel 100.0 V 90.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm;
TS10P06G LTSEP 09+ DIP Bridge rectifier
BSC100N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 44.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 44.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 47.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N-Channel 80.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC080N03MSG INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2

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Model Manufacturers lot number encapsulation illustrate
BSC100N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 44.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC100N03MSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 44.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm;
BSC090N03LSG INFINEON 10+ TDSON-8 N-Channel 30.0 V 47.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RD
BSC047N08NS3G INFINEON 10+ TDSON-8 N-Channel 80.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC080N03MSG INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
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BSC082N10LSG INFINEON 2011+ TDSON-8 N-channel, 100.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC020N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
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BSC079N10NSG INFINEON 2011+ TDSON-8 N-channel, 100V 100 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RDS (on)
BSC060N10NS3G INFINEON 2011+ TDSON-8 N-channel, 100V 90 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.0 mOhm; RDS (on)
BSC030N03MSG INFINEON 10+ TDSON-8 30.0 V 100.0 A N Channel Power FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm;

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