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BSC100N10NSFG
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BSC100N10NSFG

  • Category:FETs
  • Product Name:N-channel, 100.0 V 90.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RD
  • Manufacturers:INFINEON
  • Production Batch Number:2011+
  • Encapsulation:TDSON-8
  • Stock Status:There is stock
  • Stock Quantity:23000
  • Minimum order quantity: 1
  • Details:Haga clic para encontrar el BSC100N10NSFG material PDF
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  • Product introduction

BSC100N10NSFG canal N, 100,0 V 90,0 A FETMOSFETs N-Channel (20V... 250V); Paquete: PG-TDSON-8; Paquete: SuperSO8; VDS (máx.): 100.0 V; RDS (encendido) (máx.) (@10V): 10,0 mOhm; RDS (encendido) (máx.) (@4.5V): -; ID (máx.): 90.0 A;

andBSC100N10NSFGRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
BSC080N03MSG INFINEON 10+ TDSON-8 N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 10.2
BSC057N03LSG INFINEON 2011+ TDSON-8 30.0 V 73A N channel, FET
BSC057N03MSG INFINEON 2011+ TDSON-8 30.0 V 73A N channel, FET
BSC059N03SG INFINEON 2011+ TDSON-8 N-channel, 60.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC031N06NS3G INFINEON 2011+ TDSON-8 N-channel, 60.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (
BSC082N10LSG INFINEON 2011+ TDSON-8 N-channel, 100.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
TS10P05G SEP 10+ DIP-4 Bridge rectifier
BSC020N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS

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Model Manufacturers lot number encapsulation illustrate
BSC082N10LSG INFINEON 2011+ TDSON-8 N-channel, 100.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RD
BSC020N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC020N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC022N03SG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03LSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
BSC025N03MSG INFINEON 2011+ TDSON-8 N-channel, 30.0 V 100.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS
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