Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
BSO080P03NS3E |
INFINEON |
11+ |
SOP-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSC110N06NS3G |
INFINEON |
11+ |
TDSON-8 |
N-Channel 60.0 V 50.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
BSC106N025SG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III) 2 Power-Transistor |
BSC100N06LS3G |
INFINEON |
11+ |
TDSON-8 |
N-Channel 60.0 V 50.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
BSC152N10NSFG |
INFINEON |
11+ |
TDSON-8 |
N-Channel 100.0 V 63.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
BSC085N025SG |
INFINEON |
11+ |
TDSON-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC076N06NS3G |
INFINEON |
11+ |
TDSON-8 |
N-channel 60.0 V 50.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
BSC072N025SG |
INFINEON |
11+ |
TDSON-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC067N06LS3G |
INFINEON |
11+ |
TDSON-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC118N10NSG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC048N025SG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC037N025SG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC035N04LSG |
INFINEON |
11+ |
SON-8 |
N-channel 40.0 V; 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS ( |
BSC028N06LS3G |
INFINEON |
11+ |
SON-8 |
N-channel 60.0 V; 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; RDS ( |
BSC027N04LSG |
INFINEON |
11+ |
SON-8 |
N-Channel 40.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (o |
BSC024N025SG |
INFINEON |
11+ |
SON-8 |
N-channel 40.0 V 100.0 A FET OptiMOS (III) 2 Power-Transistor |
BSC020N025SG |
INFINEON |
11+ |
TDSON-8 |
N-channel 40.0 V 100.0 A FET OptiMOS (III) 2 Power-Transistor |
BSC019N04NSG |
INFINEON |
11+ |
TDSON-8 |
N-Channel 40.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.9 mOhm; RDS (o |
BSC018N04LSG |
INFINEON |
11+ |
TDSON-8 |
N-Channel 40.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |
BSC017N04NSG |
INFINEON |
11+ |
TDSON-8 |
N-Channel 40.0 V 100.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.6 mOhm; RDS (o |