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BSO301SP
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BSO301SP

  • Category:FETs
  • Product Name:N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m
  • Manufacturers:INFINEON
  • Production Batch Number:11+
  • Encapsulation:SOP-8
  • Stock Status:There is stock
  • Stock Quantity:35000
  • Minimum order quantity: 1
  • Details:点击查找BSO301SP的pdf资料
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  • Product introduction

BSO301SP  N通道30.0 V  场效应管P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 mOhm; RDS (on) (max) (@2.5V):

andBSO301SPRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IRF6215STRLPBF INFINEON 2010+ TO-263 150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging
IRF6215SPBF INFINEON 2010+ TO-263 N-channel FET HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A )
BSO303P INFINEON 2010+ SOP-8 N-Channel FETs P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R
BSO303SP INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0
BSC110N06NS3 INFINEON 11+ TDSON-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m
BSO080P03S INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3 INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3E INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSC110N06NS3G INFINEON 11+ TDSON-8 N-Channel 60.0 V 50.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o
BSC106N025SG INFINEON 11+ P-DSO-8 N-channel FET OptiMOS (III) 2 Power-Transistor

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Model Manufacturers lot number encapsulation illustrate
BSO080P03S INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3 INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3E INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSC110N06NS3G INFINEON 11+ TDSON-8 N-Channel 60.0 V 50.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o
BSC106N025SG INFINEON 11+ P-DSO-8 N-channel FET OptiMOS (III) 2 Power-Transistor
BSC100N06LS3G INFINEON 11+ TDSON-8 N-Channel 60.0 V 50.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (
BSC152N10NSFG INFINEON 11+ TDSON-8 N-Channel 100.0 V 63.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS
BSC085N025SG INFINEON 11+ TDSON-8 N-channel FET OptiMOS (III)2 Power-Transistor
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