BSO303P
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Product details are welcome upon request

BSO303P

  • Category:FETs
  • Product Name:N-Channel FETs P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:SOP-8
  • Stock Status:There is stock
  • Stock Quantity:0
  • Minimum order quantity: 1
  • Details:点击查找BSO303P的pdf资料
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  • Product introduction

BSO303P N通道场效应管 P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; RDS (on) (max) (@2.5V): -;

andBSO303PRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IRFR6215CPBF INFINEON 2010+ TO-260 150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging
IRF6215L-103PBF INFINEON 2010+ TO-261 150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging
IRF6215LPBF INFINEON 2010+ TO-263 150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging
IRF6215STRLPBF INFINEON 2010+ TO-263 150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging
IRF6215SPBF INFINEON 2010+ TO-263 N-channel FET HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A )
BSO303SP INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0
BSC110N06NS3 INFINEON 11+ TDSON-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m
BSO301SP INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m
BSO080P03S INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3 INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD

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Model Manufacturers lot number encapsulation illustrate
BSO303SP INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0
BSC110N06NS3 INFINEON 11+ TDSON-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m
BSO301SP INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m
BSO080P03S INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3 INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
BSO080P03NS3E INFINEON 11+ SOP-8 N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD
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