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BSO615NV
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BSO615NV

  • 所属类别：场效应管
  • 产品名称：小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：SOP-8
  • 库存状态：有库存
  • 库存量：35000
  • 最低订购量：1
  • 详细资料：点击查找BSO615NV的pdf资料
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  • 产品介绍

BSO615NV  小信号晶体管--60.0 V  2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (@4.5V): 150.0 mOhm; ID (max): 2.6 A

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BSO615N INFINEON 11+ SOP-8 小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
BSC190N15NS3G INFINEON 11+ TDSON-8 N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS
BSC050N03LSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC050N03MSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC042N03LSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5

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BSO615N INFINEON 11+ SOP-8 小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
BSC190N15NS3G INFINEON 11+ TDSON-8 N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS
BSC050N03LSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC050N03MSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC042N03LSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC042N03MSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC042N03SG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC032N03SG INFINEON 11+ TDSON-8 N沟道 30.0 V 100.0 A;场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.2 mOhm; R
BSC079N03S INFINEON 11+ SOP-8 N沟道 30.0 V 40.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RD
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BSC100N03LS INFINEON 11+ P-TDSON-8 N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC100N03MS INFINEON 11+ P-TDSON-8 N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC047N08NS3 INFINEON 11+ TDSON-8 N沟道 80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
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BSC057N03LS INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC057N03MS INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC059N03S INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC031N06NS3 INFINEON 11+ SuperSO8 N沟道 60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (o
BSC100N10NSF INFINEON 10+ TDS0N-8 100.0 V 90.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm;

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