主页 > 产品中心 > 场效应管
BSO615NV
产品图片仅供参考 欢迎索取产品详细资料

BSO615NV

  • 所属类别：场效应管
  • 产品名称：小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：SOP-8
  • 库存状态：有库存
  • 库存量：35000
  • 最低订购量：1
  • 详细资料：点击查找BSO615NV的pdf资料
  • 点击询价
联系我们在线客服1 在线客服2 点击发送邮件
  • 产品介绍

BSO615NV  å°ä¿¡å·æ™¶ä½“管--60.0 V  2.6 A场效应管N-Channel MOSFETs (20V… 250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (@4.5V): 150.0 mOhm; ID (max): 2.6 A

与BSO615NV相关的IC还有：


型号 厂商 批号 封装 说明
BSC196N10NSG INFINEON 11+ TDSON-8 N通道 100.0 V 45.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 19.6 mOhm; RDS
TS25P06G TSC 09+ DIP 桥式整流器
TS25P05G TSC 07+ DIP 桥式整流器
TS25P04G SEP 10+ DIP-4 桥式整流器
TS25P03G SEP 10+ DIP-4 桥式整流器
BSO615N INFINEON 11+ SOP-8 小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
BSC190N15NS3G INFINEON 11+ TDSON-8 N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS
BSC050N03LSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC050N03MSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC042N03LSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5

çƒé—¨æœç´¢


型号 厂商 批号 封装 说明
F3069F25V Renesas 23+ QFP100 IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC 22+ DIP photoelectric sensors
M393A8G40BB4-CWE Samsung 21+ BGA Samsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba 21+ DIP Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt 24+ 继电器 瞬时继电器
RC16M23D28 SOURIAU-SUNBANK 2023+ 连接器 Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi 2021+ 模块 Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi 2021+ 模块 Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations 24+ 连接器 CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation 24+ 连接器 Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP 24+ 工具 NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT 24+ 连接器 Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE 24+ DIP HSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT 2023+ 连接器 Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC) 24+ 工具 DMC压线钳 原装进口正品
CMF8342T CMF 23+ 模块 T系列三极管放大器模块
RWR78N39R2FR Vishay 24+ DIP RES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI 22+ 继电器 STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱 2024+ 工具 精密位置检测器
TFPT1206L1001FV Vishay Dale 24+ 1206 SENSOR PTC 1KOHM 1% 1206

INFINEON品牌产品推荐


型号 厂商 批号 封装 说明
BSO615N INFINEON 11+ SOP-8 小信号晶体管--60.0 V 2.6 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 60.0 V; RDS (on) (max) (@10V): -; RDS (on) (max) (
BSC190N15NS3G INFINEON 11+ TDSON-8 N通道 150.0 V 50.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 150.0 V; RDS (on) (max) (@10V): 19.0 mOhm; RDS
BSC050N03LSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC050N03MSG INFINEON 11+ TDSON-8 N通道 30.0 V 80.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.0 mOhm; RDS
BSC042N03LSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC042N03MSG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC042N03SG INFINEON 11+ TDSON-8 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (@4.5V): 6.5
BSC032N03SG INFINEON 11+ TDSON-8 N沟道 30.0 V 100.0 A; 场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.2 mOhm; R
BSC079N03S INFINEON 11+ SOP-8 N沟道 30.0 V 40.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.9 mOhm; RD
BSC057N08NS3 INFINEON 11+ SON-8 N沟道 80.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.7 mOhm; RDS
BSC100N03LS INFINEON 11+ P-TDSON-8 N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC100N03MS INFINEON 11+ P-TDSON-8 N沟道 30.0 V 44.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS
BSC047N08NS3 INFINEON 11+ TDSON-8 N沟道 80.0 V 100.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 80.0 V; RDS (on) (max) (@10V): 4.7 mOhm; RDS
BSC090N03MS INFINEON 11+ SON-8 N沟道 30.0 V 48.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS
BSC080N03MS INFINEON 11+ TDSON-8 N沟道 30.0 V 53.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS
BSC057N03LS INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC057N03MS INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC059N03S INFINEON 11+ TDS0N-8 N沟道 30.0 V 73.0 A场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; RDS
BSC031N06NS3 INFINEON 11+ SuperSO8 N沟道 60.0 V 100.0 A场效应管N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (o
BSC100N10NSF INFINEON 10+ TDS0N-8 100.0 V 90.0 A N通道场效应管 N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 10.0 mOhm;

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号

Related Links

wirewound resistor rectangular connector contacts crimping pliers term block hdr insulated terminals bus plug needle pusher cement resistance circular connectors ph connector