主页 > 产品中心 > 整流器
BYM26D
产品图片仅供参考
欢迎索取产品详细资料

BYM26D

  • 所属类别：整流器
  • 产品名称：Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚，密封超快恢复整流二极管)
  • 厂商：NXP
  • 生产批号：07+
  • 封装：SOD-64
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找BYM26D的pdf资料
  • 点击询价
联系我们在线客服1 在线客服2 点击发送邮件
  • 产品介绍

BYM26D  Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚，密封超快恢复整流二极管)   INNOLINE: RP50-xxxxSB - Single Outputs up to 20A; Input/Output 1.6kVDC Isolation; Adjustable Output Voltage; No Minimum Load; Under -Voltage Lockout; Industry Standard Footprint; Fixed Operating Frequency; Halt Tested; Compact 36.83 x 57.91 x 12.7mm Package; High Efficiency

与BYM26D相关的IC还有：


型号 厂商 批号 封装 说明
THS6214 TI 10+ 24HTSSOP, 24VQFN 双端口 VDSL2 线路驱动器放大器
THS6204 TI 09+ 8SO PowerPAD, 8SOIC 双路高压低失真电流反馈运算放大器
BYT53F VISHAY 07+ SOD-57 Fast Recovery Power Rectifier; Current Rating:1.9A; Features:Ultrafast Recovery; Forward Current:1.9A; Forward Current Avg Rectified, IF(AV):1.9A; For
BYT53G VISHAY 07+ SOD-57 Fast Recovery Power Rectifier; Current Rating:1.9A; Features:Ultrafast Recovery; Forward Current:1.9A; Forward Current Avg Rectified, IF(AV):1.9A; For
GI1104 VISHAY 07+ SMD Glass Passivated Fast Efficient Rectifier(钝化玻璃快速效应整流器)
BYM26E NXP 07+ SOD-64 Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚，密封超快恢复整流二极管)
1N5417 VISHAY 10+ROHS SMD Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚，密封超快恢复整流二极管)
OPA2684 TI 10+ 8SOIC, 8SOT-23 双路低功耗电流反馈运算放大器
BYW178 VISHAY 10+ROHS SOD-64 快速软恢复控制雪崩整流器（快速软恢复可控雪崩整流器）
BYT56M VISHAY 10+ROHS SOD-64 快速软恢复控制雪崩整流器（快速软恢复可控雪崩整流器）

热门搜索


型号 厂商 批号 封装 说明
MY33CTC6L-20-M1SC74B1-(20)-L-PMA JAE Electronics 25+ 连接器 Standard Circular Connector
D38999/20WJ20SN Amphenol Corporation 25+ 连接器 Circular MIL Spec Connector 30P SZ 25 WL MNT SKT
MS27467T25B07SFN Amphenol Aerospace 25+ 连接器 Circular MIL Spec Connector LJT 37C 37#16 SKT PLUG
8D7C13W35SN SOURIAU-SUNBANK 25+ 连接器 Circular MIL Spec Connector 22P Jam Nut Recpt Sz 13 w/ Skt Cont
216742-0007 MOLEX 25+ 连接器 216742-0007 $ 2.735 Cross Referenced to MOLEX - Part MOL216742-0007
EN2997Y11006MN TE Connectivity 25+ 连接器 Circular MIL Spec Connector 983-1Y 10-06 PN
EN2997SE01415MN Souriau 25+ 连接器 Circular MIL Spec Connector 8533 SS CONN
MBR40100PT_T0_00001 Panjit International Inc. 26+ DIP Schottky Diodes & Rectifiers 100V,Schottky,TO-3P/TO-247AD,40A
ABCIRHSE06T2214SCWF80M32V0 AB Connectors 24+ 连接器 ABCIRH系列连接器组件 全新原装进口 现货
GAP50MDS600000 Amphenol Positronic 26+ 连接器 Rectangular MIL Spec Connectors
F4539-000 Littelfuse 25+ SMD High Current Reflowable Thermal Protection
HCRTP-MINI-B Littelfuse 25+ SMD 汽车保险丝 16V 500A MAX F4539-000
F470-A8A LEACH 25+ 继电器 LEACH产品-F系列继电器-单刀双断
ABCIRH03HD16S8PCNF80M32P3 AB Connectors 25+ 连接器 Circular MIL Spec Connector CIR 5C 5#16S PIN RECP WALL
BR-2032/HEN Panasonic 25+ DIP Lithium Battery Coin 3V 190Mah Primary Through Hole |Panasonic Batteries BR-2032/HEN
MKS2C031001A00KSSD WIMA 25+ DIP 通用膜电容器, 金属化PET, 径向盒式 - 2引脚, 0.1 µF, ± 10%, 40 V, 63 V
MKP2G012201B00MSSD WIMA 25+ DIP Film Capacitors MKP 2 2200 pF 400 VDC 3x7.5x7.2 PCM 5
MKS2C044701M00JSSD WIMA 25+ DIP 通用膜电容器, 金属化PET, 径向盒式 - 2引脚, 1 µF, ± 5%, 40 V, 63 V
ZPF000000000167413 TE 2023+ 连接器 CMC MALE PLUG 02-04 KEY.N W/O CT + M16
CMC36M02-04SNE TE 2023+ 连接器 CMC MALE PLUG 02-04 KEY.N W/O CT

NXP品牌产品推荐


型号 厂商 批号 封装 说明
BYM26E NXP 07+ SOD-64 Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压200V,轴向引脚，密封超快恢复整流二极管)
BYM26C NXP 10+ SOD-64 快速软恢复控制雪崩整流器（快速软恢复可控雪崩整流器（600V的）） INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum
BYV28-50 NXP 07+ SOD-64 超高速低损失控制雪崩整流器（超快速低损耗控制的雪崩整流器）
PSMN004-55W NXP 10+ TO-247 N沟道晶体管TrenchMOS N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2@
PSMN005-75B NXP 10+ TO-263-3 N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN009-100W NXP 10+ TO-247 N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi
PSMN035-150P NXP 10+ TO-220 N沟道晶体管TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V
PSMN057-200B NXP 10+ TO-263 N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN057-200P NXP 10+ SOT78/TO-220 N沟道增强型场效应晶体管N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V
PSMN063-150D NXP 10+ SOT-252 N沟道增强型场效应晶体管Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz
PSMN070-200B NXP 10+ TO-263 N沟道晶体管TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri
PSMN070-200P NXP 10+ TO-220 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN102-200Y NXP 10+ SOT-669 N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
PSMN130-200D NXP 10+ SOT-252 N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体管)
PSMN1R7-30YL NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH9930L NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH8230E NXP 10+ SOT-669 N-沟道场效应晶体管 N-channel Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 67 A; RDS(on): 8.2@10V13@4.5V mOhm; VDSmax: 3
PH7030L NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PSMN7R0-30YL NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V
PH6030L NXP 10+ SOT-669 沟道场效应晶体管逻辑电平Trenchmos (tm) enhanced logic level FET - Configuration: Single N-channel ; ID DC: 80 A; Qgd (typ): 6 nC; RDS(on): 5.7@10V8.5@4.5V mOhm; V

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号

Related Links

wirewound resistor rectangular connector contacts crimping pliers term block hdr insulated terminals bus plug needle pusher cement resistance circular connectors ph connector