| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| BYT56A |
NXP |
2011 |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controlled Avalanche Rectifier) |
| BYM36AGP |
NXP |
2011 |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controlled Avalanche Rectifier) |
| BYM36BGP |
NXP |
2011 |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controlled Avalanche Rectifier) |
| BYM36CGP |
NXP |
2011 |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controlled Avalanche Rectifier) |
| BYM36DGP |
NXP |
2011 |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controlled Avalanche Rectifier) |
| BYM36EGP |
NXP |
2011 |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controlled Avalanche Rectifier) |
| BYM26D |
NXP |
07+ |
SOD-64 |
Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode (reverse voltage 200V, axial pin, sealed ultrafast recovery rectifier diode) |
| BYM26E |
NXP |
07+ |
SOD-64 |
Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode (reverse voltage 200V, axial pin, sealed ultrafast recovery rectifier diode) |
| BYM26C |
NXP |
10+ |
SOD-64 |
Fast Soft Recovery Control Avalanche Rectifier (Fast Soft Recovery Controllable Avalanche Rectifier (600V)) INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum |
| BYV28-50 |
NXP |
07+ |
SOD-64 |
Ultra-high-speed, low-loss controlled avalanche rectifier (ultra-fast, low-loss controlled avalanche rectifier) |
| PSMN004-55W |
NXP |
10+ |
TO-247 |
N-channel logic level TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 100 A; Qgd (typ): 106 nC; RDS(on): 4.2@ |
| PSMN005-75B |
NXP |
10+ |
TO-263-3 |
N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi |
| PSMN009-100W |
NXP |
10+ |
TO-247 |
N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:10; Connector Shell Size:12; Connecting Termi |
| PSMN035-150P |
NXP |
10+ |
TO-220 |
N-channel transistor TrenchMO N-channel enhancement mode field-effect transistor - Configuration: Single N-channel; ID DC: 50 A; Qgd (typ): 33 nC; RDS(on): 35@10V |
| PSMN057-200B |
NXP |
10+ |
TO-263 |
N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V |
| PSMN057-200P |
NXP |
10+ |
SOT78/TO-220 |
N-channel Enhanced FET N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel; ID DC: 39 A; Qgd (typ): 37 nC; RDS(on): 57@10V mOhm; VDSmax: 200 V |
| PSMN063-150D |
NXP |
10+ |
SOT-252 |
N-channel Enhanced Field Effect Transistor Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:4; Connector Shell Siz |
| PSMN070-200B |
NXP |
10+ |
TO-263 |
N-channel transistor TrenchMOS Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Cri |
| PSMN070-200P |
NXP |
10+ |
TO-220 |
N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V |
| PSMN102-200Y |
NXP |
10+ |
SOT-669 |
N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V |