| åå· |
åå |
æ¹å· |
å°è£
|
说æ |
| BZX79-C5V1,133 |
NXP |
10+ |
SOD27 |
Voltage regulator diodes |
| BAS35,215 |
NXP |
10+ |
SOT23 |
NPN General Purpose Silicon Transistor(NPNéç¨æ¶ä½ç®¡ |
| BCX70K,215 |
NXP |
10+ |
|
NPN General Purpose Silicon Transistor(NPNéç¨æ¶ä½ç®¡) |
| BAT54,215 |
NXP |
10+ |
SOT23-3 |
Schottky Barrier Diode(èç¹åºå¿åäºæç®¡) |
| 1N4148,113 |
NXP |
10+ |
DO35 |
Silicon Epitaxial Planar Diodes |
| BAV23,215 |
NXP |
10+ |
Tape |
General Purpose Double Diode(åéç¨äºæç®¡) |
| BC847BS,115 |
NXP |
10+ |
SOT-23 |
NPN general purpose double transistor(NPNéç¨ååæ¶ä½ç®¡) |
| BZV55-C8V2,115 |
NXP |
10+ |
PBFREE |
Voltage regulator diodes |
| PMBD7000,215 |
NXP |
10+ |
PBFREE |
High-Speed Double Diode(åé«éäºæç®¡ |
| PMBT2222A,215 |
NXP |
10+ |
11+ |
NPN switching transistors |
| BAS70,215 |
NXP |
10+ |
Tape |
Schottky Barrier (Double) Diodes(èç¹åºå¿åï¼åï¼äºæç®¡) |
| BAS21,215 |
NXP |
10+ |
SOT-23 |
General purpose diodes(éç¨äºæç®¡) |
| BC847B,215 |
NXP |
10+ |
SOT-223 |
NPN General Purpose Transistor |
| BAS316,115 |
NXP |
10+ |
Tape |
High-speed diodes( é«éäºæç®¡) |
| BC857B,215 |
NXP |
10+ |
Tape |
PNP General Purpose Transistor(PNPéç¨æ¶ä½ç®¡) |
| BC817-40,215 |
NXP |
10+ |
SOT23 |
NPN General Purpose Amplifier(NPNéç¨æ¾å¤§å¨) |
| PH4830L,115 |
NXP |
10+ |
Standardpac |
N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 84 A; Qgd (typ): 5.4 nC; RDS(on): 7@4.5 V 4.8@10 V mOhm; VDSmax: 30 V |
| BC869,115 |
NXP |
10+ |
SOT89 |
PNP medium power transistor(PNPä¸çåçæ¶ä½ç®¡) |
| BAV99S,115 |
NXP |
10+ |
Tape |
High Speed Switching Diodes; Package: PG-SOT363-6; Configuration: Quadruple; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 150.0 nA; trr (max): 4.0 |
| BAS16,215 |
NXP |
10+ |
SOT23-3 |
High-speed diodes( é«éäºæç®¡) |