| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| CL21B473KBCNNNC |
SAMSUNG |
10+ |
|
SURFACE MOUNT MONO CERAMIC CAP |
| CL31C270JBCNNNC |
SAMSUNG |
10+ |
|
SURFACE MOUNT MONO CERAMIC CAP |
| CL31B105KOFNNNE |
SAMSUNG |
10+ |
|
HIGH CV CERAMIC CHIP CAPS |
| CL03A105MQ3CSNH |
SAMSUNG |
10+ |
|
HIGH CV CERAMIC CHIP CAPS |
| CL21B104KACNNNC |
SAMSUNG |
10+ |
SMD |
CAP, 0.1UF 50V CERM CHIP, 0805 Z5U |
| CL31A476MQHNNNE |
SAMSUNG |
10+ |
SMD |
SILICON TRANSISTORS |
| CL10C220JB8NNNC |
SAMSUNG |
10+ |
NA |
CAP SMT 22PF 50V 5% NPO 0603 |
| CL10B105KO8NNNC |
Samsung |
10+ |
SMD |
1NF 50V X7R CAPACITY, CERAMIC CMS0603 |
| CL32A106KATLNNE |
SAMSUNG |
10+ |
|
： INDUCTORS FOR POWER LINE SMD |
| CL31A226MQHNNNE |
SAMSUNG |
10+ |
SMD |
SILICON TRANSISTORS |
| CL05B103KO5NNNC |
SAMSUNG |
10+ |
SMD |
CAP. CER .01MFD 16V 10% X7R |
| CL05B104KO5NNNC |
SAMSUNG |
10+ |
SMD |
CAP,SMT,0402,100N,10%,16V,X7R |
| CL31B475KAHNNNE |
SAMSUNG |
10+ |
|
CAPACITOR, 0.47UF/25V 1206 20% |
| CL32B226MQJNNNE |
SAMSUNG |
10+ |
SMD |
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |
| CL21A475KPFNNNE |
SAMSUNG |
10+ |
SMD |
CAP 22PF 50V 5% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN |
| CL31B106KOHNNNE |
SAMSUNG |
10+ |
SMD |
CAP CER 1000PF 10% 50V X7R 1206 |
| CL31C391JBCNNNC |
SAMSUNG |
10+ |
SMD |
SILICON TRANSISTORS |
| CL10A106MQ8NNNC |
SAMSUNG |
10+ |
SMD |
Extremely Low Forward Voltage drop Diode |
| CL31B104KBCNNNC |
SAMSUNG |
10+ |
SMD |
CAP,CER ML,0.1UF,X7R,1206 |
| CL32B106KAULNNE |
SAMSUNG |
10+ |
SMD |
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |