Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
CL05B103KO5NNNC |
SAMSUNG |
10+ |
SMD |
CAP. CER .01MFD 16V 10% X7R |
CL05B104KO5NNNC |
SAMSUNG |
10+ |
SMD |
CAP,SMT,0402,100N,10%,16V,X7R |
CL31B475KAHNNNE |
SAMSUNG |
10+ |
|
CAPACITOR, 0.47UF/25V 1206 20% |
CL32B226MQJNNNE |
SAMSUNG |
10+ |
SMD |
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |
CL21A475KPFNNNE |
SAMSUNG |
10+ |
SMD |
CAP 22PF 50V 5% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN |
CL31B106KOHNNNE |
SAMSUNG |
10+ |
SMD |
CAP CER 1000PF 10% 50V X7R 1206 |
CL31C391JBCNNNC |
SAMSUNG |
10+ |
SMD |
SILICON TRANSISTORS |
CL10A106MQ8NNNC |
SAMSUNG |
10+ |
SMD |
Extremely Low Forward Voltage drop Diode |
CL31B104KBCNNNC |
SAMSUNG |
10+ |
SMD |
CAP,CER ML,0.1UF,X7R,1206 |
CL32B106KAULNNE |
SAMSUNG |
10+ |
SMD |
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin |
CL32A476MQJNNNE |
SAMSUNG |
10+ |
|
INDUCTORS FOR POWER LINE SMD |
CL32A226MOJNNNE |
SAMSUNG |
10+ |
SMD |
INDUCTORS FOR POWER LINE SMD |
CL10A226MQ8NRNE |
SAMSUNG |
10+ |
SMD |
Extremely Low Forward Voltage drop Diode |
CL31B474KBHNNNE |
SAMSUNG |
10+ |
SMD |
CAPACITOR, 0.47UF/25V 1206 20% |
CL32A107MQVNNNE |
SAMSUNG |
10+ |
SMD |
|
CL10B474KO8NNNC |
SAMSUNG |
10+ |
0603 |
470 PF 10% 50V X7R 0603 CHIP CAP |
CL05A105KP5NNNC |
SAMSUNG |
10+ |
smd |
NPN SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR 1-WATT AUDIO AMPLIFIER OUTPUT AND SWITCHING APPLICATIONS |
CL21A226MQQNNNE |
SAMSUNG |
10+ |
SMD |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | TO-39 |
K9MCG08U5M-PCB0 |
SAMSUNG |
08+ |
TSOP48 |
Memory chips |
K9F2G08U0A-PCB0 |
SAMSUNG |
11+ |
TSSOP |
NAND FLASH |