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CL31A476MQHNNNE
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CL31A476MQHNNNE

  • Category:Passive element PASSIVE
  • Product Name:SILICON TRANSISTORS
  • Manufacturers:SAMSUNG
  • Production Batch Number:10+
  • Encapsulation:SMD
  • Stock Status:There is stock
  • Stock Quantity:16000
  • Minimum order quantity: 1
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  • Product introduction

CL31A476MQHNNNE

SILICON TRANSISTORS

andCL31A476MQHNNNERelated ICs are:


Model Manufacturers lot number encapsulation illustrate
VJ1210A103GXAAT VIT 10+   Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 2 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/
V54C3128164VBI7 PROMOS 11+ TSOP54 Memory chips
293D227X06R3E2TE3 SPPP 10+ NA Tantalum Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Tantalum; Capacitance:220uF; Capacitance Tolerance:+/-
593D336X9016D2WE3 SPP 10+   Tantalum Capacitor; Capacitor Type:Solid; Voltage Rating:16VDC; Capacitor Dielectric Material:Tantalum; Capacitance:33uF; Capacitance Tolerance:+/- 10
TPSD337K006R0045 AVX 10+ SMD CAP 330UF 25V 6.3V TANT SMD-7343-31 TR-7 LOWESR-45
TACL106M006XTA AVX 10+   Tantalum Capacitor; Capacitance:10uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:6.3V; Package/Case:1608-10; Terminal Type:PCB SMT; ESR:6ohm;
TR3B106M020C1000 SPP 10+   Tantalum Capacitor; Capacitor Type:Solid; Voltage Rating:20VDC; Capacitor Dielectric Material:Tantalum; Capacitance:10uF; Capacitance Tolerance:+/- 10
TPSE156M050R0250 AVX 10+ SMD Tantalum Capacitor; Capacitor Type:Low ESR; Voltage Rating:50VDC; Capacitor Dielectric Material:Tantalum; Capacitance:15uF; Capacitance Tolerance:+/-
CL10C220JB8NNNC SAMSUNG 10+ NA CAP SMT 22PF 50V 5% NPO 0603
0805YC334KAT2A AVX 10+ SMD CAPACITOR, 330NF 16V X7R 0805CAPACITOR, 330NF 16V X7R 0805; Capacitance:330nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer;

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SAMSUNG brand product recommendation


Model Manufacturers lot number encapsulation illustrate
CL10C220JB8NNNC SAMSUNG 10+ NA CAP SMT 22PF 50V 5% NPO 0603
CL10B105KO8NNNC Samsung 10+ SMD 1NF 50V X7R CAPACITY, CERAMIC CMS0603
CL32A106KATLNNE SAMSUNG 10+   ： INDUCTORS FOR POWER LINE SMD
CL31A226MQHNNNE SAMSUNG 10+ SMD SILICON TRANSISTORS
CL05B103KO5NNNC SAMSUNG 10+ SMD CAP. CER .01MFD 16V 10% X7R
CL05B104KO5NNNC SAMSUNG 10+ SMD CAP,SMT,0402,100N,10%,16V,X7R
CL31B475KAHNNNE SAMSUNG 10+   CAPACITOR, 0.47UF/25V 1206 20%
CL32B226MQJNNNE SAMSUNG 10+ SMD Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin
CL21A475KPFNNNE SAMSUNG 10+ SMD CAP 22PF 50V 5% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN
CL31B106KOHNNNE SAMSUNG 10+ SMD CAP CER 1000PF 10% 50V X7R 1206
CL31C391JBCNNNC SAMSUNG 10+ SMD SILICON TRANSISTORS
CL10A106MQ8NNNC SAMSUNG 10+ SMD Extremely Low Forward Voltage drop Diode
CL31B104KBCNNNC SAMSUNG 10+ SMD CAP,CER ML,0.1UF,X7R,1206
CL32B106KAULNNE SAMSUNG 10+ SMD Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:160VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operatin
CL32A476MQJNNNE SAMSUNG 10+   INDUCTORS FOR POWER LINE SMD
CL32A226MOJNNNE SAMSUNG 10+ SMD INDUCTORS FOR POWER LINE SMD
CL10A226MQ8NRNE SAMSUNG 10+ SMD Extremely Low Forward Voltage drop Diode
CL31B474KBHNNNE SAMSUNG 10+ SMD CAPACITOR, 0.47UF/25V 1206 20%
CL32A107MQVNNNE SAMSUNG 10+ SMD  
CL10B474KO8NNNC SAMSUNG 10+ 0603 470 PF 10% 50V X7R 0603 CHIP CAP

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