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FDN361BN
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FDN361BN

  • 所属类别：场效应管
  • 产品名称：30V N-Channel, Logic Level, PowerTrench MOSFET
  • 厂商：FAIRCHILD
  • 生产批号：2010+
  • 封装：SOT23-3
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找FDN361BN的pdf资料
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  • 产品介绍

FDN361BN   30V N-Channel, Logic Level, PowerTrench MOSFET

与FDN361BN相关的IC还有：


型号 厂商 批号 封装 说明
FDMS8460 FAIRCHILD 2010+ QFN8 40V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel
NDS7002A FAIRCHILD 2010+ SOT23-3 N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应管)
MMBF170 FAIRCHILD 2010+ SOT-23 N沟道增强模式场效应管（不适用马鞍山沟道增强型场效应管）
FDMS3672 FAIRCHILD 2010+ QFN-56 N沟道UltraFET沟道MOSFET 100V的，22A条，23mohm
FDN360P FAIRCHILD 2010+ SOT-23 Single P-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
FDMS7692 FAIRCHILD 2010+ PQFN8 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
FDS6681Z FAIRCHILD 2010+ SOP-8 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
NDS9957 FAIRCHILD 2010+ SOP-8 Dual N-Channel Enhancement Mode Field Effect Transistor（2.6A，60V，0.16Ω）(双N沟道增强型场效应管（漏电流2.6A, 漏源电压60V，导通电阻0.16Ω）)
HUFA76413DK8T FAIRCHILD 2010+ SOP-8 N沟道逻辑电平UltraFET功率MOSFET 60V的4.8A，56mз
FDS9945 FAIRCHILD 2010+ SOP-8 60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel

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FAIRCHILD品牌产品推荐


型号 厂商 批号 封装 说明
FDMS7692 FAIRCHILD 2010+ PQFN8 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
FDS6681Z FAIRCHILD 2010+ SOP-8 30V P-Channel PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
NDS9957 FAIRCHILD 2010+ SOP-8 Dual N-Channel Enhancement Mode Field Effect Transistor（2.6A，60V，0.16Ω）(双N沟道增强型场效应管（漏电流2.6A, 漏源电压60V，导通电阻0.16Ω）)
HUFA76413DK8T FAIRCHILD 2010+ SOP-8 N沟道逻辑电平UltraFET功率MOSFET 60V的4.8A，56mз
FDS9945 FAIRCHILD 2010+ SOP-8 60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel
FDMS2572 FAIRCHILD 2010+ QFN-56 N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
SFP9540 FAIRCHILD 2010+ TO-220 P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
RFP70N06 FAIRCHILD 2010+ TO-220 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
RFD16N05LSM FAIRCHILD 2010+ TO-252 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM9A FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD 2010+ TO-252 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD 2010+ TO-251 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD 2010+ SOT-223 N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N沟道增强型场效应管（漏电流7.2A, 漏源电压30V，导通电阻0.035Ω）)
NDS356AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P沟道逻辑增强型MOS场效应管（漏电流-1.1A, 漏源电压-30V，导通电阻0.3Ω）)
NDS355AN FAIRCHILD 2010+ SOT-23-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N沟道逻辑增强型MOS场效应管（漏电流1.7A, 漏源电压30V，导通电阻 0.125Ω）)
NDS352AP FAIRCHILD 2010+ SOT-23-3 P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P沟道逻辑增强型MOS场效应管（漏电流-0.9A, 漏源电压-30V，导通电阻0.5Ω）)
FDN5630_NL FAIRCHILD 2010+ SOT-23 60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD 2010+ TO-220 N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD 2010+ TO-252 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
HUF75882G3 FAIRCHILD 2010+ TO-220 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)

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