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FDP032N08
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FDP032N08

  • 所属类别：场效应管
  • 产品名称：75V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail
  • 厂商：INFINEON
  • 生产批号：11+
  • 封装：TO-220AB
  • 库存状态：有库存
  • 库存量：15600
  • 最低订购量：1
  • 详细资料：点击查找FDP032N08的pdf资料
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  • 产品介绍

FDP032N08   75V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail

与FDP032N08相关的IC还有：


型号 厂商 批号 封装 说明
IPB021N04N INFINEON 10+ TO-263-7 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V)
IPB017N06N3 INFINEON 10+ TO-263-7 N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 60.0 V; RDS (on) (max) (@10V): 1.7 mOhm; RDS (on) (ma
IPB015N04N INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V)
IPB011N04N INFINEON 11+ TO-263-7 N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.1 mOhm; RDS (on) (ma
FDP047N10 INFINEON 11+ TO-220 100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail
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BUZ30A INFINEON 11+ TO-220 SIPMOS功率晶体管（N通道增强模式雪崩级）

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型号 厂商 批号 封装 说明
FDP025N06 INFINEON 11+ TO-220-3 60V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail
FDB2532 INFINEON 11+ TO-263 150V N-Channel UltraFET Trench MOSFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel
FDB047N10 INFINEON 11+ TO-263 100V N-Channel PowerTrench MOSFET; Package: TO-263(D2PAK); No of Pins: 3; Container: Tape & Reel
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BSZ100N03LSG INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (on
BSZ088N03MSG INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.8 mOhm; RDS (on)
BSZ088N03LSG INFINEON 11+ SON-8 N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.8 mOhm; RDS (on)
BSO4822XT INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (on) (max) (@4.5V): 14.4 mOhm
BSO4822 INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (on) (max) (@4.5V): 14.4 mOhm
BSO4804XT INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): 28.2 mOhm
BSO4804 INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): 28.2 mOhm
BSO4420XT INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.8 mOhm; RDS (on) (max) (@4.5V): 10.9 mOhm;
BSO4420 INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.8 mOhm; RDS (on) (max) (@4.5V): 10.9 mOhm;
BSO4410XT INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.0 mOhm; RDS (on) (max) (@4.5V): 18.8 mOhm
BSO4410 INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-DSO-8; Package: SO-8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.0 mOhm; RDS (on) (max) (@4.5V): 18.8 mOhm
BSO350N03XT INFINEON 11+ SOP-8 N-Channel 20V 250V mosfet(…); 包装:PG-DSO-8; 包装:SO-8; VDS公司(最高):30.0 V; 关系型数据库(在)(最高)(@10V):达到mOhm关系型数据库(在); (最高) (@4.5V):52.0 mOhm; ID(最高):5.0 A
BSO350N03 INFINEON 10+ SOP-8 N沟道功率场效应管
BSO300N03SXT INFINEON 10+ SOP-8 N沟道功率场效应管

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