型号 |
厂商 |
批号 |
封装 |
说明 |
FDP75N08
|
FAIRCHILD |
10+ |
TO-220 |
75V的N沟道MOSFET |
FDP6030BL
|
FAIRCHILD |
10+ |
TO-220 |
N-Channel Logic Level PowerTrench MOSFET(N沟道逻辑电平PowerTrench MOS场效应管) |
FOD817C3SD
|
Fairchild |
10+ |
SOP-4 |
4-Pin DIP Phototransistor Output Optocoupler; Package: SMDIP-B; No of Pins: 4; Container: Tape & Reel |
MMBD1503A
|
FAIRCHILD |
2011+ |
SOT-23 |
High Conductance Low Leakage Diode; Package: SOT-23; No of Pins: 3; Container: Tape & Reel |
NDT452AP
|
FAIRCHILD |
10+ |
SOT223 |
P-Channel Enhancement Mode Field Effect Transistor(-5A,-30V,0.065Ω)(P沟道增强型场效应管(漏电流-5A, 漏源电压-30V,导通电阻0.065Ω)) |
BZX84-C15
|
FAIRCHILD |
10+ |
SOT-23 |
电压调节器二极管 |
FDP39N20
|
FAIRCHILD |
11+ |
TO-220 |
200伏N沟道MOSFET |
FDP060AN08A0
|
FAIRCHILD |
11+ |
TO-220 |
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB Package; Package: TO-220; No of Pins: 3; Container: Rai |
FDP047AN08A0
|
FAIRCHILD |
11+ |
TO-220 |
75V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rai |
FDP038AN06A0
|
FAIRCHILD |
11+ |
TO-220 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0038 Ohms @ VGS = 10V, TO-220 Package; Package: TO-220; No of Pins: 3; Container: Rail |
FDP031N08
|
FAIRCHILD |
11+ |
SOT23-3 |
N沟道增强模式的逻辑电平场效应晶体管 |
FDN5630
|
FAIRCHILD |
11+ |
SOT23-3 |
N沟道增强模式的逻辑电平场效应晶体管 |
FDN359BN
|
FAIRCHILD |
11+ |
SOT23-3 |
N沟道增强模式的逻辑电平场效应晶体管 |
FDN357N
|
FAIRCHILD |
11+ |
SOT23-3 |
N沟道增强模式的逻辑电平场效应晶体管 |
FDMS8670S
|
FAIRCHILD |
11+ |
QFN8 |
N沟道的PowerTrench㈢式SyncFET⑩ |
FDMS8670AS
|
FAIRCHILD |
11+ |
QFN-8 |
N沟道的PowerTrench㈢式SyncFET⑩ |
FDMC8878
|
FAIRCHILD |
11+ |
DFN8 |
N沟道功率沟道MOSFET 30V的,16.5A,14mohm |
FDMC8296
|
FAIRCHILD |
11+ |
PQFN-8 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel |
FDM6296
|
FAIRCHILD |
11+ |
MLP-8 |
单个N -沟道逻辑电平的PowerTrench MOSFET的30V的㈢,11.5A,10.5ヘ |
FDI038AN06A0
|
FAIRCHILD |
11+ |
TO-262 |
N沟道的PowerTrench MOSFET的60V的80A,3.8mз |