| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| NDS9957 |
FAIRCHILD |
2010+ |
SOP-8 |
Dual N-Channel Enhancement Mode Field Effect Transistor (2.6A, 60V, 0.16Ω) (Dual N-Channel Enhanced FET (Leakage Current 2.6A, Drain-Source Voltage 60V, On-Resistance 0.16Ω)) |
| HUFA76413DK8T |
FAIRCHILD |
2010+ |
SOP-8 |
N-channel logic level UltraFET power MOSFET 60V of 4.8A, 56mз |
| FDS9945 |
FAIRCHILD |
2010+ |
SOP-8 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel |
| FDMS2572 |
FAIRCHILD |
2010+ |
QFN-56 |
N-Channel UltraFET Trench (iii) MOSFET 150V, 27A, 47mз |
| SFP9540 |
FAIRCHILD |
2010+ |
TO-220 |
P-Channel Power MOSFET (P-Channel Power MOS FET with drain-to-source voltage of -100V) |
| RFP70N06 |
FAIRCHILD |
2010+ |
TO-220 |
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail |
| RFD16N05LSM |
FAIRCHILD |
2010+ |
TO-252 |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N-Channel Power MOS FETs) |
| RFD14N05LSM9A |
FAIRCHILD |
2010+ |
TO-252 |
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs) |
| RFD14N05LSM |
FAIRCHILD |
2010+ |
TO-252 |
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs) |
| RFD14N05L |
FAIRCHILD |
2010+ |
TO-251 |
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs (14A, 50V, 0.100 Ω, Logic Level N-Channel Power MOS FETs) |
| NDT451AN |
FAIRCHILD |
2010+ |
SOT-223 |
N-Channel Enhancement Mode Field Effect Transistor (7.2A, 30V, 0.035Ω) (N-Channel Enhanced FET (leakage current 7.2A, drain-source voltage 30V, on-resistance 0.035Ω)) |
| NDS356AP |
FAIRCHILD |
2010+ |
SOT-23-3 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A, -30V, 0.3Ω) (P-channel logic enhancement MOS FET (leakage current -1.1A, drain-to-source voltage-30V, on-resistance 0.3Ω)) |
| NDS355AN |
FAIRCHILD |
2010+ |
SOT-23-3 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor (1.7A, 30V, 0.125Ω) (N-Channel Logic Enhanced MOS FET (Leakage Current 1.7A, Drain-Source Voltage 30V, On-Resistance 0.125Ω)) |
| NDS352AP |
FAIRCHILD |
2010+ |
SOT-23-3 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A, -30V, 0.5Ω) (P-channel logic enhancement MOS FET (leakage current -0.9A, drain-to-source voltage-30V, on-resistance 0.5Ω)) |
| FDN5630_NL |
FAIRCHILD |
2010+ |
SOT-23 |
60V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel |
| MTP3055VL |
FAIRCHILD |
2010+ |
TO-220 |
N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail |
| HUF76407D3ST |
FAIRCHILD |
2010+ |
TO-252 |
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel |
| HUF75882G3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET) |
| HUF75653G3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET (75A, 100V, 0.008Ω N-Channel Logic Level Power MOS FET) |
| HUF75545P3 |
FAIRCHILD |
2010+ |
TO-220 |
75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET (75A, 80V, 0.010Ω N-channel logic level power MOS FET |