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IDB15E60
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Category:Rectifier diodes
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Product Name:600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
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Manufacturers:Infineon
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Production Batch Number:2010+
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Encapsulation:P-TO220-3-4
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Stock Status:There is stock
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Stock Quantity:12000
- Minimum order quantity: 1
- Details:
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IDB15E60 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
andIDB15E60Related ICs are:
Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IDB45E60 |
INFINEON |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB30E60 |
INFINEON |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB30E120 |
INFINEON |
2010+ |
TO-263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB23E60 |
Infineon |
2010+ |
SOT263 |
600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB18E120 |
Infineon |
2010+ |
SOT263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB12E120 |
Infineon |
2010+ |
P-TO220-3-4 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB09E60 |
Infineon |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB09E120 |
Infineon |
2010+ |
TO-263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
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Infineon |
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TO-263 |
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IDB04E120 |
Infineon |
2010+ |
TO-263 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
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encapsulation |
illustrate |
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Infineon |
2010+ |
P-TO220-3-4 |
1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
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Infineon |
2010+ |
TO-263 |
600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
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1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
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