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IDW75E60
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IDW75E60

  • Category:Fast recovery diode
  • Product Name:Fast switching fast recovery diodes 600V Silicon Power Diodes; Package: PG-TO247-3; IF (typ): 75.0 A; IF (max): 120.0 A; IF,SM (max): 220.0 A; VF (typ): 1.65 V; IR (max): 40.0
  • Manufacturers:INFINEON
  • Production Batch Number:10+
  • Encapsulation:TO-247
  • Stock Status:There is stock
  • Stock Quantity:12000
  • Minimum order quantity: 1
  • Details:Haga clic aquí para encontrar información en pdf sobre IDW75E60
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  • Product introduction

IDW75E60快速开关快恢复二极管Diodos de potencia de silicio de 600V; Paquete: PG-TO247-3; FI (típico): 75,0 A; IF (máx.): 120,0 A; SI,SM (máx.): 220,0 A; FV (típico): 1,65 V; IR (máx.): 40.0 μA;

andIDW75E60Related ICs are:


Model Manufacturers lot number encapsulation illustrate
IGB30N60T INFINEON 10+ TO-263 Fast switching fast recovery diode IGBT discretes; Package: PG-TO263-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 6
IGB15N60T INFINEON 10+ TO-263 Fast switching fast recovery diode IGBT discretes; Package: PG-TO263-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 3
IGB03N120H2 INFINEON 10+ TO-263 Fast switching fast recovery diode IGBT discretes; Package: PG-TO263-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: D2PAK (TO-263); VCE (max): 1,200.0 V; IC(max) @ 25
IGB01N120H2 INFINEON 10+ TO-263 Fast switching fast recovery diode GBT Discretes; Package: PG-TO263-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: D2PAK (TO-263); VCE (max): 1,200.0 V; IC(max) @ 25°
IGA03N120H2 INFINEON 10+ TO-220F Fast switching fast recovery diode IGBT discretes; Package: PG-TO220-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: -; I
IDW100E60 INFINEON 1012+ TO-247 Fast switching fast recovery diodes 600V Silicon Power Diodes; Package: PG-TO247-3; IF (typ): 100.0 A; IF (max): 150.0 A; IF,SM (max): 400.0 A; VF (typ): 1.65 V; IR (max): 40.
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IDP45E60 INFINEON 10+ PG-TO220-2 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;

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Model Manufacturers lot number encapsulation illustrate
IDW100E60 INFINEON 1012+ TO-247 Fast switching fast recovery diodes 600V Silicon Power Diodes; Package: PG-TO247-3; IF (typ): 100.0 A; IF (max): 150.0 A; IF,SM (max): 400.0 A; VF (typ): 1.65 V; IR (max): 40.
IDP45E60 INFINEON 10+ PG-TO220-2 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
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IDP18E120 INFINEON 10+ PG-TO220-2 1200V功率二极管 1200V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0
IDP15E60 INFINEON 10+ PG-TO220-2 600V功率二极管 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDP12E120 INFINEON 10+ PG-TO220-2 1200V功率二极管 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDP09E60 INFINEON 10+ PG-TO220-2 600V功率二极管 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDP09E120 INFINEON 10+ PG-TO220-2 1200V功率二极管 1200V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0
IDP06E60 INFINEON 10+ TO-220-2 600V功率二极管 600V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDP04E120 INFINEON 10+ TO-220 肖特基二极管1200V Silicon Power Diodes; Package: PG-TO220-2; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDD23E60 INFINEON 10+ SOT-252 肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDD15E60 INFINEON 10+ SOT-252 肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDD09E60 INFINEON 2010+ PG-TO252-3 快恢复二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDD06E60 INFINEON 2010+ PG-TO252-3 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA
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IDB45E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E60 INFINEON 2010+ TO-263 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB30E120 INFINEON 2010+ TO-263 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB23E60 Infineon 2010+ SOT263 600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;

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