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IPB03N03LB
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IPB03N03LB

  • 所属类别：场效应管
  • 产品名称：N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：12000
  • 最低订购量：1
  • 详细资料：点击查找IPB03N03LB的pdf资料
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  • 产品介绍

IPB03N03LB       N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V): 4.1 mOhm; ID (max): 80.0 A

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IPB051NE8N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (
IPB04N03LB INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) ( @
IPB04N03LA INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) ( @
IPB04CN10N INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V
IPB03N03LA INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)
IPB037N06N3 INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.7 mOhm; RDS (on) (max) (@4.5V)
IPB030N08N3 INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 80.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (ma
IPB027N10N3 INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V
IPB025N08N3 INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS (on) (max) (@4.5V)

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型号 厂商 批号 封装 说明
IPB03N03LA INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)
IPB037N06N3 INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.7 mOhm; RDS (on) (max) (@4.5V)
IPB030N08N3 INFINEON 10+ TO-263 N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 80.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (ma
IPB027N10N3 INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V
IPB025N08N3 INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS (on) (max) (@4.5V)
IPB021N06N3G INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V)
IPB021N04N INFINEON 10+ TO-263-7 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V)
IPB017N06N3 INFINEON 10+ TO-263-7 N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 60.0 V; RDS (on) (max) (@10V): 1.7 mOhm; RDS (on) (ma
IPB015N04N INFINEON 10+ TO-263-3 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 40.0 V; RDS (on) (max) (@10V): 1.4 mOhm; RDS (on) (max) (@4.5V)
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BSZ100N03LSG INFINEON 11+ SOP-8 N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (on
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