Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IPB08CNE8N |
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) ( |
IPB08CN10N |
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) |
IPB075N150N3 |
INFINEON |
2010+ |
TO-263 |
Power transistors |
IPB06N03LB |
INFINEON |
2010+ |
TO-263 |
功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She |
IPB06N03LA |
INFINEON |
2010+ |
TO-263 |
功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She |
IPB06CNE8N |
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) ( |
IPB06CN10N |
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) |
IPB05N03LB |
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) ( |
IPB05CN10N |
INFINEON |
2010+ |
PG-TO263-3 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) |
IPB051NE8N |
INFINEON |
2010+ |
PG-TO263-3 |
功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( |
IPB04N03LB |
INFINEON |
2010+ |
TO-263 |
功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@ |
IPB04N03LA |
INFINEON |
2010+ |
TO-263 |
功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@ |
IPB04CN10N |
INFINEON |
10+ |
TO-263 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V |
IPB03N03LB |
INFINEON |
10+ |
TO-263 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V) |
IPB03N03LA |
INFINEON |
10+ |
TO-263 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V) |
IPB037N06N3 |
INFINEON |
10+ |
TO-263 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.7 mOhm; RDS (on) (max) (@4.5V) |
IPB030N08N3 |
INFINEON |
10+ |
TO-263 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 80.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (ma |
IPB027N10N3 |
INFINEON |
10+ |
TO-263-3 |
N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V |
IPB025N08N3 |
INFINEON |
10+ |
TO-263-3 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 2.5 mOhm; RDS (on) (max) (@4.5V) |
IPB021N06N3G |
INFINEON |
10+ |
TO-263-3 |
N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; RDS (on) (max) (@4.5V) |