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IPB14N03LA
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IPB14N03LA

  • Category:FETs
  • Product Name:Power Transistors N-Channel MOSFETs (20V... 150V)
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:TO263-3-2
  • Stock Status:There is stock
  • Stock Quantity:1600
  • Minimum order quantity: 1
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  • Product introduction

IPB14N03LA ترانزستور الطاقةN-Channel MOSFETs (20V... 150V)

andIPB14N03LARelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IPB26CN10N INFINEON 2010+ TO-263 ترانزستورات الطاقة N-قناة MOSFETs (20 فولت ... 250 فولت) ؛ الحزمة: PG-TO263-3 ؛ الحزمة: D2PAK (TO-263); VDS (الحد الأقصى): 100.0 فولت ؛ RDS (تشغيل) (الحد الأقصى) (@10V): 26.0 مللي أوم ؛ RDS (تشغيل) (الحد الأقصى)
SB156G LTSEP 09+ DIP-4 Bridge rectifier
IPB16CNE8N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
SB156 SEP/TSC 11+ROHS DIP-4 Bridge rectifier
IPB16CN10N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPB13N03LB INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 150V)
SB154W LTSEP 09+ DIP-4 Bridge rectifier
SB154M LTSEP 09+ DIP-4 Bridge rectifier
IPB12CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)

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Model Manufacturers lot number encapsulation illustrate
IPB13N03LB INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 150V)
IPB12CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB11N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB10N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB09N03LA INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
IPB08CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
IPB08CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPB075N150N3 INFINEON 2010+ TO-263 Power transistors
IPB06N03LB INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06N03LA INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB06CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPB05N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) (
IPB05CN10N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPB051NE8N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (
IPB04N03LB INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@
IPB04N03LA INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@
IPB04CN10N INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V
IPB03N03LB INFINEON 10+ TO-263 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 2.7 mOhm; RDS (on) (max) (@4.5V)

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