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IPB180N04S4-H0
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IPB180N04S4-H0

  • 所属类别：电源管理芯片
  • 产品名称：Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
  • 厂商：INFINEON
  • 生产批号：10+
  • 封装：PG-TO263-7-
  • 库存状态：有库存
  • 库存量：4500
  • 最低订购量：1
  • 详细资料：点击查找IPB180N04S4-H0的pdf资料
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  • 产品介绍

IPB180N04S4-H0 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; RthJC (max): 0.8 K/W;

与IPB180N04S4-H0相关的IC还有：


型号 厂商 批号 封装 说明
IPB45N04S4L-08 INFINEON 10+ TO263-3-2 OptiMOS㈢-T Power-Transistor
IPB25N06S3L-22 INFINEON 10+ TO263-3-2 OptiMOS㈢-T Power-Transistor
IPB25N06S3-25 INFINEON 10+ TO-263 OptiMOS㈢-T Power-Transistor
IPB22N03S4L-15 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N06S4-H1 INFINEON 10+ PG-TO263-7- Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S4-00 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N03S4L-H0 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB180N03S4L-01 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB160N04S4-H1 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor

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型号 厂商 批号 封装 说明
IPB180N04S4-00 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N04S3-02 INFINEON 10+ TO-263 Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R
IPB180N03S4L-H0 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB180N03S4L-01 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB160N04S4-H1 INFINEON 10+ PG-TO263-7- OptiMOS㈢ - T Power-Transistor
IPB160N04S3-H2 INFINEON 10+ PG-TO263-7 OptiMOS㈢ - T Power-Transistor
IPB160N04S2L-03 INFINEON 10+ PG-TO263-7 OptiMOS㈢ - T Power-Transistor
IPB160N04S2-03 INFINEON 10+ TO-263-6 OptiMOS㈢ - T Power-Transistor
IPB120N06S4-H1 INFINEON 10+ TO263-3 Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB120N06S4-03 INFINEON 10+ TO263-3 Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB120N06S4-02 INFINEON 10+ TO263-3 Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt
IPB100N10S3-05 INFINEON 10+ PG-TO263-3 OptiMOS㈢ Power-Transistor
IPB100N08S2L-07 INFINEON 10+ TO263-3 OptiMOS㈢ Power-Transistor
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IPB100N08S2-07 INFINEON 11+ TO-263 功率晶体管
IPB100N06S3-03 INFINEON 11+ TO263-3-2 功率晶体管
IPB100N06S2L-05 INFINEON 11+ TO263-3-2 功率晶体管

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