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IPB26CN10N
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IPB26CN10N

  • Category:FETs
  • Product Name:Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:16000
  • Minimum order quantity: 1
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  • Product introduction

IPB26CN10N Transistor de potenciaMOSFETs N-Channel (20V... 250V); Paquete: PG-TO263-3; Paquete: D2PAK (TO-263); VDS (máx.): 100.0 V; RDS (encendido) (máx.) (@10V): 26,0 mOhm; RDS (encendido) (máx.) (@4.5V): -; ID (máx.): 35.0 A;

andIPB26CN10NRelated ICs are:


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SB156G LTSEP 09+ DIP-4 Bridge rectifier
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IPB16CN10N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
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IPB16CNE8N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
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IPB12CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB11N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB10N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB09N03LA INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
IPB08CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
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IPB06N03LB INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06N03LA INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB06CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPB05N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) (
IPB05CN10N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPB051NE8N INFINEON 2010+ PG-TO263-3 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (
IPB04N03LB INFINEON 2010+ TO-263 功率晶体管 -Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@

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