Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IPB45N06S3-16 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB45N04S4L-08 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB25N06S3L-22 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB25N06S3-25 |
INFINEON |
10+ |
TO-263 |
OptiMOS (III) - T Power-Transistor |
IPB22N03S4L-15 |
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N06S4-H1 |
INFINEON |
10+ |
PG-TO263-7- |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S4-H0 |
INFINEON |
10+ |
PG-TO263-7- |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S4-00 |
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S3-02 |
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N03S4L-H0 |
INFINEON |
10+ |
PG-TO263-7- |
OptiMOS㈢ - T Power-Transistor |
IPB180N03S4L-01 |
INFINEON |
10+ |
PG-TO263-7- |
OptiMOS㈢ - T Power-Transistor |
IPB160N04S4-H1 |
INFINEON |
10+ |
PG-TO263-7- |
OptiMOS㈢ - T Power-Transistor |
IPB160N04S3-H2 |
INFINEON |
10+ |
PG-TO263-7 |
OptiMOS㈢ - T Power-Transistor |
IPB160N04S2L-03 |
INFINEON |
10+ |
PG-TO263-7 |
OptiMOS㈢ - T Power-Transistor |
IPB160N04S2-03 |
INFINEON |
10+ |
TO-263-6 |
OptiMOS㈢ - T Power-Transistor |
IPB120N06S4-H1 |
INFINEON |
10+ |
TO263-3 |
Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt |
IPB120N06S4-03 |
INFINEON |
10+ |
TO263-3 |
Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt |
IPB120N06S4-02 |
INFINEON |
10+ |
TO263-3 |
Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS™-T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; Rt |
IPB100N10S3-05 |
INFINEON |
10+ |
PG-TO263-3 |
OptiMOS (iii) Power-Transistor |
IPB100N08S2L-07 |
INFINEON |
10+ |
TO263-3 |
OptiMOS (iii) Power-Transistor |