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IPB70N10SL16
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IPB70N10SL16

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V）
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPB70N10SL16的pdf资料
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  • 产品介绍

IPB70N10SL16   功率晶体管   N-Channel MOSFETs (20V… 250V）

与IPB70N10SL16相关的IC还有：


型号 厂商 批号 封装 说明
IPD03N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPBH6N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB80N06S2L11 INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V）
SB156W LTSEP 09+ DIP-4 桥式整流器
IPB47N10S33 INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V）
SB156M LTSEP 09+ DIP-4 桥式整流器
IPB26CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
SB156G LTSEP 09+ DIP-4 桥式整流器

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INFINEON品牌产品推荐


型号 厂商 批号 封装 说明
IPB47N10S33 INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V）
IPB26CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB16CNE8N INFINEON 2010+ TO263-3-2 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON 2010+ TO263-3-2 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPB14N03LA INFINEON 2010+ TO263-3-2 功率晶体管 N-Channel MOSFETs (20V... 150V)
IPB13N03LB INFINEON 2010+ TO263-3-2 功率晶体管 N-Channel MOSFETs (20V... 150V)
IPB12CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB11N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB10N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB09N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
IPB08CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
IPB08CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPB075N150N3 INFINEON 2010+ TO-263 功率晶体管
IPB06N03LB INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06N03LA INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB06CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPB05N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.6 mOhm; RDS (on) (max) (

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