| Model | Manufacturers | lot number | encapsulation | illustrate | 
| IPB77N06S2-12 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB70N10SL-16 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB70N10S3L-12 | INFINEON | 10+ | TO263-3 | OptiMOS (3)-T Power-Transistor | 
| IPB70N10S3-12 | INFINEON | 10+ | TO263-3 | OptiMOS (3)-T Power-Transistor | 
| IPB70N04S4-06 | INFINEON | 10+ | TO263-3 | OptiMOS (3)-T Power-Transistor | 
| IPB70N04S3-07 | INFINEON | 10+ | PG-TO263-3 | OptiMOS (3)-T Power-Transistor | 
| IPB50N10S3L-16 | INFINEON | 10+ | PG-TO263-3 | OptiMOS (3)-T Power-Transistor | 
| IPB47N10SL-26 | INFINEON | 10+ | PG-TO263-3 | OptiMOS (3)-T Power-Transistor | 
| IPB47N10S-33 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB45P03P4L-11 | INFINEON | 10+ | TO-263 | OptiMOS (3)-T Power-Transistor | 
| IPB45N06S4L-08 | INFINEON | 10+ | TO-263 | OptiMOS (3)-T Power-Transistor | 
| IPB45N06S4-09 | INFINEON | 10+ | D PAK | OptiMOS (3)-T Power-Transistor | 
| IPB45N06S3L-13 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB45N06S3-16 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB45N04S4L-08 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB25N06S3L-22 | INFINEON | 10+ | TO263-3-2 | OptiMOS (3)-T Power-Transistor | 
| IPB25N06S3-25 | INFINEON | 10+ | TO-263 | OptiMOS (3)-T Power-Transistor | 
| IPB22N03S4L-15 | INFINEON | 10+ | TO-263 | Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R | 
| IPB180N06S4-H1 | INFINEON | 10+ | PG-TO263-7- | Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R | 
| IPB180N04S4-H0 | INFINEON | 10+ | PG-TO263-7- | Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |