Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IPB77N06S2-12 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB70N10SL-16 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB70N10S3L-12 |
INFINEON |
10+ |
TO263-3 |
OptiMOS (III) - T Power-Transistor |
IPB70N10S3-12 |
INFINEON |
10+ |
TO263-3 |
OptiMOS (III) - T Power-Transistor |
IPB70N04S4-06 |
INFINEON |
10+ |
TO263-3 |
OptiMOS (III) - T Power-Transistor |
IPB70N04S3-07 |
INFINEON |
10+ |
PG-TO263-3 |
OptiMOS (III) - T Power-Transistor |
IPB50N10S3L-16 |
INFINEON |
10+ |
PG-TO263-3 |
OptiMOS (III) - T Power-Transistor |
IPB47N10SL-26 |
INFINEON |
10+ |
PG-TO263-3 |
OptiMOS (III) - T Power-Transistor |
IPB47N10S-33 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB45P03P4L-11 |
INFINEON |
10+ |
TO-263 |
OptiMOS (III) - T Power-Transistor |
IPB45N06S4L-08 |
INFINEON |
10+ |
TO-263 |
OptiMOS (III) - T Power-Transistor |
IPB45N06S4-09 |
INFINEON |
10+ |
D PAK |
OptiMOS (III) - T Power-Transistor |
IPB45N06S3L-13 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB45N06S3-16 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB45N04S4L-08 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB25N06S3L-22 |
INFINEON |
10+ |
TO263-3-2 |
OptiMOS (III) - T Power-Transistor |
IPB25N06S3-25 |
INFINEON |
10+ |
TO-263 |
OptiMOS (III) - T Power-Transistor |
IPB22N03S4L-15 |
INFINEON |
10+ |
TO-263 |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N06S4-H1 |
INFINEON |
10+ |
PG-TO263-7- |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |
IPB180N04S4-H0 |
INFINEON |
10+ |
PG-TO263-7- |
Single: N-Channel 30V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS™-T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 1.05 mOhm; ID (max): 180.0 A; R |