IPBH6N03LA
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IPBH6N03LA

  • Category:FETs
  • Product Name:Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:16000
  • Minimum order quantity: 1
  • Details:Click here to find pdf information on IPBH6N03LA
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  • Product introduction

IPBH6N03LA power transistorN-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (@4.5V): 10.2 mOhm; ID (max): 50.0 A;

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IPD03N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
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IPB80N06S2L11 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V)
IPB70N10SL16 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V)
IPB47N10S33 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V)
IPB26CNE8N INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB16CNE8N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
IPB14N03LA INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 150V)
IPB13N03LB INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 150V)
IPB12CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB11N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB10N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB09N03LA INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) (
IPB08CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (
IPB08CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
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IPB06N03LA INFINEON 2010+ TO-263 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular She
IPB06CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (

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