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IPD05N03LB
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IPD05N03LB

  • Category:FETs
  • Product Name:Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:SOT-252
  • Stock Status:There is stock
  • Stock Quantity:16000
  • Minimum order quantity: 1
  • Details:点击查找IPD05N03LB的pdf资料
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  • Product introduction

IPD05N03LB   功率晶体管N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@4.5V): 8.4 mOhm; ID (max): 50.0 A;

andIPD05N03LBRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IPD06N03LB INFINEON 2010+ TO-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) ( @
SB310 VISHAY 09+ DO-201AD Bridge rectifier rectifier diode
IPD06N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD060N03LG INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
SB305G SEP 10+ DIP  
IPD05N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
SB158W LTSEP 09+ DIP-4 Bridge rectifier
IPD04N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD04N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD040N03LG INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @

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Model Manufacturers lot number encapsulation illustrate
IPD05N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD04N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD04N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD040N03LG INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPBH6N03LA INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB80N06S2L11 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V）
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IPB26CNE8N INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB16CNE8N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
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IPB11N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (
IPB10N03LB INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V… 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (

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