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IPD060N03LG
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IPD060N03LG

  • 所属类别：场效应管
  • 产品名称：功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：SOT-252
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPD060N03LG的pdf资料
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  • 产品介绍

IPD060N03LG   åŠŸçŽ‡æ™¶ä½“管   N-Channel MOSFETs (20V… 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@4.5V): 8.4 mOhm; ID (max): 50.0 A;

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IPD05N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
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IPD04N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD04N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD040N03LG INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LB INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPBH6N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB80N06S2L11 INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V）
IPB70N10SL16 INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V）
IPB47N10S33 INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V）
IPB26CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB16CNE8N INFINEON 2010+ TO263-3-2 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON 2010+ TO263-3-2 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)
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IPB12CNE8N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB12CN10N INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max)
IPB11N03LA INFINEON 2010+ TO-263 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) (

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