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IPD10N03LA
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IPD10N03LA

  • Category:FETs
  • Product Name:Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:TO252-3
  • Stock Status:There is stock
  • Stock Quantity:16000
  • Minimum order quantity: 1
  • Details:Click to find the IPD10N03LA PDF material
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  • Product introduction

IPD10N03LA Power transistorN-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) (@4.5V): 17.4 mOhm; ID (max): 30.0 A;

andIPD10N03LARelated ICs are:


Model Manufacturers lot number encapsulation illustrate
SB320 VISHAY 10+ DO201AD Bridge rectifier rectifier diode
SB310G SEP/TSC 11+ROHS DIP-4 Bridge rectifier
IPD12CNE8N INFINEON 2010+ TO252-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) (
IPD12CN10N INFINEON 2010+ TO252-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max)
SB3100G SEP 10+ DIP-4 Bridge rectifier
IPD09N03LB INFINEON 2010+ TO252-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) ( @
IPD090N03LG INFINEON 2010+ TO-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) ( @
SB3100 VISHAY 10+ DO-201AB Bridge rectifier rectifier diode
IPD06N03LB INFINEON 2010+ TO-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) ( @
SB310 VISHAY 09+ DO-201AD Bridge rectifier rectifier diode

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Model Manufacturers lot number encapsulation illustrate
IPD09N03LB INFINEON 2010+ TO252-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) ( @
IPD090N03LG INFINEON 2010+ TO-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) ( @
IPD06N03LB INFINEON 2010+ TO-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) ( @
IPD06N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD060N03LG INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD05N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD05N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @
IPD04N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD04N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD040N03LG INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LB INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPD03N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @
IPBH6N03LA INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPB80N06S2L11 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V）
IPB70N10SL16 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V）
IPB47N10S33 INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V）
IPB26CNE8N INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB26CN10N INFINEON 2010+ TO-263 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPB16CNE8N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max)
IPB16CN10N INFINEON 2010+ TO263-3-2 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max)

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